X-On Electronics has gained recognition as a prominent supplier of TK8A60DA(STA4,Q,M) MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK8A60DA(STA4,Q,M) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK8A60DA(STA4,Q,M) Toshiba

TK8A60DA(STA4,Q,M) electronic component of Toshiba
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Part No.TK8A60DA(STA4,Q,M)
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET N-Ch MOS 7.5A 600V 45W 1050pF 1 Ohm
Datasheet: TK8A60DA(STA4,Q,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 4.1424
10 : USD 1.5535
50 : USD 1.4188
100 : USD 1.222
500 : USD 1.0325
1000 : USD 0.8803
2500 : USD 0.814
5000 : USD 0.7861
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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Number of Channels
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Transistor Type
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We are delighted to provide the TK8A60DA(STA4,Q,M) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK8A60DA(STA4,Q,M) and other electronic components in the MOSFETs category and beyond.

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TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A60DA Switching Regulator Applications Unit: mm Low drain-source ON resistance: R = 0.8 (typ.) DS (ON) High forward transfer admittance: Y = 4.0 S (typ.) fs Low leakage current: I = 10 A (max) (V = 600 V) DSS DS Enhancement-mode: V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 V GSS DC (Note 1) I 7.5 D Drain current A Pulse (Note 1) I 30 DP 1: Gate Drain power dissipation (Tc = 25C) P 45 W D 2: Drain Single pulse avalanche energy 3: Source E 270 mJ AS (Note 2) JEDEC Avalanche current I 7.5 A AR JEITA SC-67 Repetitive avalanche energy (Note 3) E 4.5 mJ AR TOSHIBA 2-10U1B Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Internal Connection Thermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.78 C/W th (ch-c) Thermal resistance, channel to ambient R 62.5 C/W th (ch-a) Note 1: Please use devices on conditions that the channel temperature is below 150C. 1 Note 2: V = 90 V, T = 25C (initial), L = 8.4 mH, R = 25 , I = 7.5 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 Start of commercial production 2008-09 1 2013-11-01 TK8A60DA Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 30 V, V = 0 V 1 A GSS GS DS Drain cut-off current I V = 600 V, V = 0 V 10 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON resistance R V = 10 V, I = 4 A 0.8 1.0 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 4 A 1.0 4.0 S fs DS D Input capacitance C 1050 iss V = 25 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C 5 rss DS GS Output capacitance C 100 oss 10 V I = 4 A V Rise time t D OUT 25 r V GS 0 V Turn-on time t on 60 R = 50 L 50 Switching time ns Fall time t 10 f V 200 V DD Turn-off time t 75 off Duty 1%, t = 10 s w Total gate charge Q 20 g Gate-source charge Q V 400 V, V = 10 V, I = 7.5 A 13 nC DD GS D gs Gate-drain charge Q 7 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 7.5 A DR (Note 1) Pulse drain reverse current (Note 1) I 30 A DRP Forward voltage (diode) V I = 7.5 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t I = 7.5 A, V = 0 V, 1300 ns rr DR GS Reverse recovery charge Q dI /dt = 100 A/s 12 C DR rr Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to K8A60DA Part No. (or abbreviation code) Lot No. environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament Note 4 and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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