TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R = 0.7 (typ.) DS (ON) High forward transfer admittance: Y = 4.0 S (typ.) fs Low leakage current: I = 10 A (max) (V = 500 V) DSS DS Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 500 V DSS Gate-source voltage V 30 V GSS DC (Note 1) I 8 D 1: Gate Drain current A Pulse (t = 1 ms) 2: Drain I 32 DP (Note 1) 3: Source Drain power dissipation (Tc = 25C) P 40 W D Single pulse avalanche energy E 165 mJ AS (Note 2) JEDEC Avalanche current I 8 A AR JEITA SC-67 Repetitive avalanche energy (Note 3) E 4.0 mJ AR TOSHIBA 2-10U1B Channel temperature T 150 C ch Weight : 1.7 g (typ.) Storage temperature range T -55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.125 C/W th (ch-c) Thermal resistance, channel to ambient R 62.5 C/W th (ch-a) 1 Note 1: Ensure that the channel temperature does not exceed 150. Note 2: V = 90 V, T = 25C (initial), L = 4.4 mH, R = 25 , I = 8 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3 This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production 2008-07 1 2013-11-01 TK8A50D Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 30 V, V = 0 V 1 A GSS GS DS Drain cut-off current I V = 500 V, V = 0 V 10 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 500 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON-resistance R V = 10 V, I = 4 A 0.7 0.85 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 4 A 1.0 4.0 S fs DS D Input capacitance C 800 iss V = 25 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C 4 rss DS GS Output capacitance C 100 oss 10 V I = 4 A V Rise time t 20 D OUT r V GS 0 V Turn-on time t 40 on R = 50 L 50 Switching time ns Fall time t 12 f V 200 V DD Turn-off time t 60 off Duty 1%, t = 10 s w Total gate charge Q 16 g V 400 V, V = 10 V, I = 8 A 10 nC Gate-source charge Q gs DD GS D Gate-drain charge Q 6 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current (Note 1) I 8 A DR Pulse drain reverse current (Note 1) I 32 A DRP Forward voltage (diode) V I = 8 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t I = 8 A, V = 0 V, 1200 ns rr DR GS dI /dt = 100 A/s Reverse recovery charge Q 10 C rr DR Marking Note 4: A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. K8A50D Part No. (or abbreviation code) The RoHS is the Directive 2011/65/EU of the European Parliament Lot No. and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Note 4 2 2013-11-01