X-On Electronics has gained recognition as a prominent supplier of MDD1501RH MOSFETs across the USA, India, Europe, Australia, and various other global locations. MDD1501RH MOSFETs are a product manufactured by Magnachip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MDD1501RH Magnachip

MDD1501RH electronic component of Magnachip
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See Product Specifications
Part No.MDD1501RH
Manufacturer: Magnachip
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 25.1A 3-Pin(2+Tab) DPAK T/R
Datasheet: MDD1501RH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.4252 ea
Line Total: USD 1275.6 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4252

   
Manufacturer
Product Category
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Package Type
Operating Temp Range
Pin Count
Number Of Elements
Operating Temperature Classification
Gate-Source Voltage Max
Rad Hardened
Type
Drain-Source On-Volt
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We are delighted to provide the MDD1501RH from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MDD1501RH and other electronic components in the MOSFETs category and beyond.

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MDD1501 Single N-Channel Trench MOSFET 30V MDD1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6m General Description Features The MDD1501 uses advanced MagnaChips MOSFET V = 30V DS Technology, which provides high performance in on-state I = 67.4A V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) < 5.6m V = 10V quality. MDD1501 is suitable device for DC to DC GS converter and general purpose applications. < 8.6m V = 4.5V GS 100% UIL Tested 100% Rg Tested D G S o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 67.4 C o T =70 C 53.9 C (1) Continuous Drain Current I A D o (3) T =25 C 25.1 A o (3) T =70 C 20.2 A Pulsed Drain Current I 100 A DM o T =25 C 44.6 C o TC=70 C 28.5 Power Dissipation P W D o (3) T =25 C 6.2 A o (3) T =70 C 4.0 A (2) Single Pulse Avalanche Energy E 94 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 20.0 JA o C/W Thermal Resistance, Junction-to-Case R 2.8 JC 1 May. 2011. Version 1.3 MagnaChip Semiconductor Ltd. MDD1501 Single N-Channel Trench MOSFET 30V Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status o MDD1501RH -55~150 C D-PAK Tape & Reel 3000 units Halogen Free o Electrical Characteristics (T =25 C) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.55 1.95 2.7 GS(th) DS GS D V = 30V, V = 0V - - 1 DS GS Drain Cut-Off Current I DSS o T =55 C - - 5 A J Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 20A - 4.9 5.6 GS D o Drain-Source ON Resistance R T =125 C - 7.1 8.1 m DS(ON) J V = 4.5V, I = 16A - 7.2 8.6 GS D Forward Transconductance g V = 5V, I = 10A - 35 - S fs DS D Dynamic Characteristics Total Gate Charge Q 15.5 20.7 25.9 g(10V) Total Gate Charge Q 7.6 10.1 12.6 g(4.5V) V = 15.0V, I = 20A, DS D nC V = 10V GS Gate-Source Charge Q - 3.7 - gs Gate-Drain Charge Q - 2.9 - gd Input Capacitance C 1013 1350 1688 iss V = 15.0V, V = 0V, DS GS Reverse Transfer Capacitance C 99 132 165 pF rss f = 1.0MHz Output Capacitance C 195 261 326 oss Turn-On Delay Time t - 8.8 - d(on) Rise Time t - 12.2 - r V = 10V, V = 15.0V, GS DS ns I = 20A , R = 3.0 D G Turn-Off Delay Time t - 29.5 - d(off) Fall Time t - 8.6 - f Gate Resistance Rg f=1 MHz - 1.5 2.5 Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 20A, V = 0V - 0.8 1.1 V SD S GS Body Diode Reverse Recovery Time t - 22.4 33.6 ns rr I = 20A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 14.0 21.0 nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. E is tested at starting Tj = 25, L = 0.1mH, I = 24.0A, V = 27V, V = 10V. AS AS DD GS 3. T < 10sec. 2 May. 2011. Version 1.3 MagnaChip Semiconductor Ltd.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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