ATP201-TL-H ON Semiconductor

Ordering number : ENA1547A ATP201 N-Channel Power MOSFET ATP201 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =18A 24 S DS D R (on)1 I =18A, V =10V 13 17 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =9A, V =4.5V 23 33 m DS D GS Input Capacitance Ciss 985 pF Output Capacitance Coss V =10V, f=1MHz 180 pF DS Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time t (on) 10 ns d Rise Time t 230 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 51 ns d Fall Time t 39 ns f Total Gate Charge Qg 17 nC Gate-to-Source Charge Qgs V =15V, V =10V, I =35A 4.7 nC DS GS D Gate-to-Drain Miller Charge Qgd 2.8 nC Diode Forward Voltage V I =35A, V =0V 0.97 1.2 V SD S GS Switching Time Test Circuit V V =15V IN DD 10V 0V I =18A D V IN R =0.83 L D V OUT PW=10s D.C.1% G ATP201 P.G 50 S Ordering Information Device Package Shipping memo ATP201-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1547-2/7