ATP202-TL-H ON Semiconductor

Ordering number : ENA1317A ATP202 N-Channel Power MOSFET ATP202 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =25A 10 17 S DS D R (on)1 I =25A, V =10V 912 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =13A, V =4.5V 14 20 m DS D GS Input Capacitance Ciss 1650 pF Output Capacitance Coss V =10V, f=1MHz 285 pF DS Reverse Transfer Capacitance Crss 160 pF Turn-ON Delay Time t (on) 16 ns d Rise Time t 185 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 93 ns d Fall Time t 93 ns f Total Gate Charge Qg 27 nC Gate-to-Source Charge Qgs V =15V, V =10V, I =50A 7.5 nC DS GS D Gate-to-Drain Miller Charge Qgd 4nC Diode Forward Voltage V I =50A, V =0V 0.97 1.2 V SD S GS Switching Time Test Circuit V V =15V IN DD 10V 0V I =25A D V IN R =0.6 L D V OUT PW=10s D.C.1% G ATP202 P.G 50 S Ordering Information Device Package Shipping memo ATP202-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1317-2/7