AUIRF1010EZ AUIRF1010EZS AUTOMOTIVE GRADE AUIRF1010EZL Features V 60V DSS Advanced Process Technology R typ. DS(on) 6.8m Ultra Low On-Resistance max. 8.5m 175C Operating Temperature I 84A D (Silicon Limited) Fast Switching Repetitive Avalanche Allowed up to Tjmax I 75A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this S S S D HEXFET Power MOSFET utilizes the latest processing G D G G techniques to achieve extremely low on-resistance per silicon 2 area. Additional features of this design are a 175C junction TO-220AB D Pak TO-262 AUIRF1010EZ operating temperature, fast switching speed and improved AUIRF1010EZS AUIRF1010EZL repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in G D S Automotive applications and wide variety of other applications. Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity AUIRF1010EZ TO-220 Tube 50 AUIRF1010EZ AUIRF1010EZL TO-262 Tube 50 AUIRF1010EZL Tube 50 AUIRF1010EZS 2 AUIRF1010EZS D -Pak Tape and Reel Left 800 AUIRF1010EZSTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 84 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 60 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 75 D C GS I Pulsed Drain Current 340 DM P T = 25C Maximum Power Dissipation 140 W D C Linear Derating Factor 0.90 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 99 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 180 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.11 R JC Case-to-Sink, Flat, Greased Surface 0.50 R CS C/W R Junction-to-Ambient 62 JA Junction-to-Ambient ( PCB Mount, steady state) 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-09-18 AUIRF1010EZ/S/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.058 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 6.8 8.5 m V = 10V, I = 51A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 200 S V = 25V, I = 51A DS D 20 V =60 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V =60V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 58 86 I = 51A g D Q Gate-to-Source Charge 19 28 nC V = 48V gs DS Q Gate-to-Drain Charge 21 32 V = 10V gd GS t Turn-On Delay Time 19 V = 30V d(on) DD t Rise Time 90 I = 51A r D ns t Turn-Off Delay Time 38 R = 7.95 d(off) G V = 10V t Fall Time 54 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 2810 V = 0V iss GS C Output Capacitance 420 V = 25V oss DS = 1.0MHz, See Fig. 5 C Reverse Transfer Capacitance 200 rss pF C Output Capacitance 1440 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 320 V = 0V, V = 48V = 1.0MHz oss GS DS C Effective Output Capacitance 510 V = 0V, V = 0V to 48V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 84 S (Body Diode) showing the A Pulsed Source Current integral reverse I 340 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 51A,V = 0V SD J S GS t Reverse Recovery Time 41 62 ns T = 25C ,I = 51A, V = 30V rr J F DD Q Reverse Recovery Charge 54 81 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.077mH, R = 25 , I = 51A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population, starting T = 25C, L = 0.077mH, R = 25, I = 51A, V =10V. J G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 :