Ordering number : ENA1318A
ATP203
N-Channel Power MOSFET
ATP203
Electrical Characteristics at Ta=25C
Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V
(BR)DSS D GS
Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A
DSS DS GS
Gate-to-Source Leakage Current I V =16V, V =0V 10 A
GSS GS DS
Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V
GS DS D
Forward Transfer Admittance | yfs | V =10V, I =38A 13 22 S
DS D
R (on)1 I =38A, V =10V 6.3 8.2 m
DS D GS
Static Drain-to-Source On-State Resistance
R (on)2 I =19A, V =4.5V 9.5 13.5 m
DS D GS
Input Capacitance
Ciss 2750 pF
Output Capacitance
Coss V =10V, f=1MHz 450 pF
DS
Reverse Transfer Capacitance
Crss 265 pF
Turn-ON Delay Time
t (on) 24 ns
d
Rise Time
t 420 ns
r
See speci ed Test Circuit.
Turn-OFF Delay Time
t (off) 130 ns
d
Fall Time
t 75 ns
f
Total Gate Charge
Qg 44 nC
Gate-to-Source Charge Qgs V =15V, V =10V, I =75A 14 nC
DS GS D
Gate-to-Drain Miller Charge
Qgd 5.6 nC
Diode Forward Voltage
V I =75A, V =0V 1.02 1.2 V
SD S GS
Switching Time Test Circuit
V V =15V
IN DD
10V
0V
I =38A
D
V
IN
R =0.39
L
D V
OUT
PW=10s
D.C.1%
G
ATP203
P.G
50 S
Ordering Information
Device Package Shipping memo
ATP203-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free
No. A1318-2/7