ATP302-TL-H ON Semiconductor

Ordering number : ENA1654A ATP302 P-Channel Power MOSFET ATP302 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--60V, V =0V --10 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--35A 75 S DS D R (on)1 I =--35A, V =--10V 10 13 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--35A, V =--4.5V 13 18 m DS D GS Input Capacitance Ciss 5400 pF Output Capacitance Coss V =--20V, f=1MHz 500 pF DS Reverse Transfer Capacitance Crss 370 pF Turn-ON Delay Time t (on) 35 ns d Rise Time t 430 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 420 ns d Fall Time t 500 ns f Total Gate Charge Qg 115 nC Gate-to-Source Charge Qgs V =--36V, V =--10V, I =--70A 20 nC DS GS D Gate-to-Drain Miller Charge Qgd 25 nC Diode Forward Voltage V I =--70A, V =0V --1.0 --1.5 V SD S GS Switching Time Test Circuit Avalanche Resistance Test Circuit V = --36V V IN DD 0V L --10V 50 I = --35A D V RG IN R =1.03 L D V OUT PW=10s ATP302 D.C.1% 0V 50 V DD G --10V ATP302 P.G 50 S Ordering Information Device Package Shipping memo ATP302-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1654-2/7