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X-On Electronics has gained recognition as a prominent supplier of MDU1515URH MOSFETs across the USA, India, Europe, Australia, and various other global locations. MDU1515URH MOSFETs are a product manufactured by Magnachip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MDU1515URH Magnachip

MDU1515URH electronic component of Magnachip
MDU1515URH Magnachip
MDU1515URH MOSFETs
MDU1515URH  Semiconductors

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See Product Specifications
Part No. MDU1515URH
Manufacturer: Magnachip
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 20.8A 8-Pin DFN EP T/R
Datasheet: MDU1515URH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
63: USD 0.1695 ea
Line Total: USD 10.68 
Availability - 0
MOQ: 63  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 63
Multiples : 1
63 : USD 0.1695
100 : USD 0.1669
250 : USD 0.1432
500 : USD 0.1356
1000 : USD 0.1285

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Brand
Pin Count
Operating Temp Range
Number Of Elements
Operating Temperature Classification
Gate-Source Voltage Max
Rad Hardened
Drain-Source On-Volt
Package Type
Type
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MDU1515URH from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MDU1515URH and other electronic components in the MOSFETs category and beyond.

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MDU1515 Single N-Channel Trench MOSFET 30V MDU1515 Single N-channel Trench MOSFET 30V, 57.4A, 7.2 m General Description Features The MDU1515 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 57.4A V = 10V D GS resistance, fast switching performance and excellent R DS(ON) < 7.2 m V = 10V quality. MDU1515 is suitable device for DC/DC Converter GS and general purpose applications. < 11.0 m V = 4.5V GS 100% UIL Tested 100% Rg Tested D D D D D D D D D G S S S G G S S S PowerDFN56 S o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 57.4 C o T =70 C 45.9 C (1) Continuous Drain Current I A D o (3) T =25 C 20.8 A o (3) TA=70 C 16.6 Pulsed Drain Current I 100 A DM o T =25 C 41.6 C o T =70 C 26.6 C Power Dissipation P W D o (3) T =25 C 5.5 A o (3) T =70 C 3.5 A (2) Single Pulse Avalanche Energy E 65.0 mJ AS o Junction and Storage Temperature Range TJ, Tstg -55~150 C Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 22.7 JA o C/W Thermal Resistance, Junction-to-Case R 3.0 JC 1 Feb. 2014. Version 1.3 MagnaChip Semiconductor Ltd. MDU1515 Single N-Channel Trench MOSFET 30V Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status o MDU1515URH -55~150 C PowerDFN56 Tape & Reel 3000 units Halogen Free o Electrical Characteristics (T =25 C) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.3 1.9 2.7 GS(th) DS GS D V = 30V, V = 0V - - 1 DS GS Drain Cut-Off Current I DSS o T =55 C - - 5 A J Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 16A - 6.3 7.2 GS D o Drain-Source ON Resistance R T =125 C - 9.1 10.5 m DS(ON) J V = 4.5V, I = 13A - 9.2 11.0 GS D Forward Transconductance g V = 5V, I = 10A - 35 - S fs DS D Dynamic Characteristics Total Gate Charge Q 13.1 17.5 21.9 g(10V) Total Gate Charge Q 6.3 8.4 10.5 g(4.5V) V = 15.0V, I = 16A, DS D nC V = 10V GS Gate-Source Charge Q - 3.6 - gs Gate-Drain Charge Q - 2.8 - gd Input Capacitance C 816 1088 1360 iss V = 15.0V, V = 0V, DS GS Reverse Transfer Capacitance C 79 105 131 pF rss f = 1.0MHz Output Capacitance C 164 218 273 oss Turn-On Delay Time t - 3.0 - d(on) Rise Time t - 8.6 - r V = 10V, V = 15.0V, GS DS ns I = 16A , R = 3.0 D G Turn-Off Delay Time t - 24.3 - d(off) Fall Time t - 8.2 - f Gate Resistance Rg f=1 MHz 1.0 3.0 4.5 Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 16A, V = 0V - 0.8 1.1 V SD S GS Body Diode Reverse Recovery Time t - 24.9 37.4 ns rr IF = 16A, dl/dt = 100A/s Body Diode Reverse Recovery Charge Q - 16.5 24.8 nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. E is tested at starting Tj = 25 , L = 0.1mH, I = 18A, V = 27V, V = 10V AS AS DD GS 3. T < 10sec. 2 Feb. 2014. Version 1.3 MagnaChip Semiconductor Ltd.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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