MDS1654URH Magnachip

MDS1654 Single N-channel Trench MOSFET 30V MDS1654 Single N-Channel Trench MOSFET 30V, 15A, 9.5m General Description Features The MDS1654 uses advanced MagnaChips MOSFET V = 30V DS Technology, which provides low on-state resistance, I = 15A V = 10V D GS high switching performance and excellent reliability. R DS(ON) < 9.5m V = 10V GS MDS1654 is suitable device for DC-DC Converters < 13.0m V = 4.5V GS and general purpose applications. Applications DC-DC Converters 5(D) D 6(D) 7(D) 8(D) G 4(G) 3(S) 2(S) 1(S) S o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 15 A a Continuous Drain Current I D o T =100C 10.5 A a Pulsed Drain Current I 60 A DM o T =25 C 2.5 a (1) Power Dissipation P W D o T =100C 1.25 a (2) Single Pulse Avalanche Energy E 98 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 50 JA o C/W Thermal Resistance, Junction-to-Case R 25 JC 1 Feb. 2011. Version 1.1 MagnaChip Semiconductor Ltd. MDS1654 Single N-channel Trench MOSFET 30V Ordering Information Part Number Temp. Range Package Packing ROHS Status o MDS1654URH -55~150 C SOIC-8 Tape & Reel Halogen Free o Electrical Characteristics (Ta =25 C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250 A, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250 A 1.0 1.9 3.0 GS(th) DS GS D Drain Cut-Off Current I V = 30V, V = 0V - - 1 DSS DS GS A Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 15A - 7.1 9.5 GS D Drain-Source ON Resistance R m DS(ON) V = 4.5V, I = 12A - 9.4 13.0 GS D Forward Transconductance g V = 5V, I = 15A - 19 - S fs DS D Dynamic Characteristics Total Gate Charge Q 13.7 - g(10V) Total Gate Charge Q 6.8 - g(4.5V) V = 15V, I = 15A, DS D nC V = 10V GS Gate-Source Charge Q - 2.0 - gs Gate-Drain Charge Q - 3.5 - gd Input Capacitance C - 1396 iss V = 15V, V = 0V, DS GS Reverse Transfer Capacitance C - 156 pF rss f = 1.0MHz Output Capacitance C - 272 oss Turn-On Delay Time t - 8.4 - d(on) Rise Time t - 24.6 - r V = 10V, V = 15V, GS DS ns R = 3 , R = 3 L G Turn-Off Delay Time t - 33 - d(off) Fall Time t - 13.6 - f Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 1A, V = 0V - 0.7 1.0 V SD S GS Body Diode Reverse Recovery Time t - 19 21 ns rr I = 15A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 9 12 nC rr Note : 1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting T = 25C, L = 1mH, I = 14A, V = 15V, V = 10V. J AS DD GS 2 Feb. 2011. Version 1.1 MagnaChip Semiconductor Ltd.