AUTOMOTIVE GRADE AUIRF1018ES HEXFET Power MOSFET Features V 60V DSS Advanced Process Technology R typ. Ultra Low On-Resistance 7.1m DS(on) 175C Operating Temperature max. 8.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax I 79A D Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applications, this HEXFET S Power MOSFET utilizes the latest processing techniques to achieve G extremely low on-resistance per silicon area. Additional features of 2 D Pak this design are a 175C junction operating temperature, fast AUIRF1018ES switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and G D S reliable device for use in Automotive applications and a wide variety Gate Drain Source of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 50 AUIRF1018ES 2 AUIRF1018ES D -Pak Tape and Reel Left 800 AUIRF1018ESTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 79 D C GS A I T = 100C Continuous Drain Current, V 10V 56 D C GS I Pulsed Drain Current 315 DM P T = 25C Maximum Power Dissipation 110 W D C Linear Derating Factor 0.76 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 88 mJ AS I Avalanche Current 47 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery 21 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.32 R JC C/W 2 Junction-to-Ambient (PCB Mount), D Pak 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-23 AUIRF1018ES Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.073 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 7.1 8.4 m V = 10V, I = 47A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 100A GS(th) DS GS D gfs Forward Trans conductance 110 S V = 50V, I = 47A DS D R Internal Gate Resistance 0.73 G 20 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 48V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 46 69 I = 47A g D Q Gate-to-Source Charge 10 V = 30V gs DS nC Q Gate-to-Drain Charge 12 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 34 sync g gd t Turn-On Delay Time 13 V = 39V d(on) DD t Rise Time 35 I = 47A r D ns t Turn-Off Delay Time 55 R = 10 d(off) G t Fall Time 46 V = 10V f GS C Input Capacitance 2290 V = 0V iss GS C Output Capacitance 270 V = 50V oss DS C Reverse Transfer Capacitance 130 = 1.0MHz rss pF C Effective Output Capacitance (Energy Related) 390 V = 0V, V = 0V to 60V oss eff.(ER) GS DS C Effective Output Capacitance (Time Related) 630 V = 0V, V = 0V to 60V oss eff.(TR) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 79 S (Body Diode) showing the A Pulsed Source Current integral reverse I 315 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 47A,V = 0V SD J S GS 26 39 T = 25C V = 51V J DD t Reverse Recovery Time ns rr 31 47 T = 125C I = 47A, J F 24 36 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 35 53 T = 125C J I Reverse Recovery Current 1.8 A T = 25C J RRM t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 0.08mH, R = 25 , I = 47A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS I 47A, di/dt 1668A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J This is only applied to TO-220. 2 2015-11-23