42mW - 650V SiC Cascode UF3C065040T3S Datasheet Description CASE CASE D (2) United Silicon Carbide s cascode products co-package its high- performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are G (1) excellent for switching inductive loads when used with recommended RC- snubbers, and any application requiring standard gate drive. 1 2 3 S (3) Part Number Package Marking UF3C065040T3S TO-220-3L UF3C065040T3S Features Typical Applications Typical on-resistance R of 42mW w w DS(on),typ EV charging w Maximum operating temperature of 175C w PV inverters w Excellent reverse recovery w Switch mode power supplies Low gate charge w w Power factor correction modules Low intrinsic capacitance w w Motor drives w ESD protected, HBM class 2 w Induction heating Very low switching losses (required RC-snubber loss negligible w under typical operating conditions) Maximum Ratings Parameter Symbol Test Conditions Value Units Drain-source voltage V 650 V DS Gate-source voltage V DC -25 to +25 V GS T =25C 54 A C 1 I Continuous drain current D T =100C 40 A C 2 I T =25C 125 Pulsed drain current A DM C 3 E L=15mH, I =3.19A Single pulsed avalanche energy 76 mJ AS AS T =25C Power dissipation P 326 C W tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds Limited by T 1 J,max 2 Pulse width t limited by T p J,max 3 Starting T = 25C J 1 Rev. A, December 2018 For more information go to www.unitedsic.com. 42mW - 650V SiC Cascode UF3C065040T3S Datasheet Electrical Characteristics (T = +25C unless otherwise specified) J Typical Performance - Static Value Parameter Symbol Test Conditions Units Min Typ Max Drain-source breakdown voltage BV V =0V, I =1mA 650 V DS GS D V =650V, DS 0.7 150 V =0V, T =25C GS J I Total drain leakage current mA DSS V =650V, DS 10 V =0V, T =175C GS J V =0V, T =25C, DS j Total gate leakage current I 6 20 mA GSS V =-20V / +20V GS V =12V, I =40A, GS D 42 52 T =25C J Drain-source on-resistance R mW DS(on) V =12V, I =40A, GS D 78 T =175C J Gate threshold voltage V V =5V, I =10mA 4 5 6 V G(th) DS D R Gate resistance f=1MHz, open drain 4.5 G W Typical Performance - Reverse Diode Value Parameter Symbol Test Conditions Units Min Typ Max 1 I T =25C Diode continuous forward current C 54 A S 2 I T =25C Diode pulse current 125 A S,pulse C V =0V, I =20A, GS F 1.5 1.75 T =25C J Forward voltage V V FSD V =0V, I =20A, GS F 1.8 T =175C J V =400V, I =40A, R F Reverse recovery charge Q 138 nC rr V =-5V, R =20W GS G EXT di/dt=1100A/ms, Reverse recovery time t 38 ns rr T =25C J V =400V, I =40A, R F Reverse recovery charge Q 137 nC rr V =-5V, R =20W GS G EXT di/dt=1100A/ms, Reverse recovery time t 38 ns rr T =150C J 2 Rev. A, December 2018 For more information go to www.unitedsic.com.