1200V-150mW SiC Cascode Rev. A, April 2019 DATASHEET Description United Silicon Carbide s cascode products co-package its high- UF3C120150K4S performance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247- package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. CASE CASE D (1) Features w Typical on-resistance R of 150mW DS(on),typ w Maximum operating temperature of 175C G (4) w Excellent reverse recovery w Low gate charge KS (3) w Low intrinsic capacitance w ESD protected, HBM class 2 S (2) 1 2 w TO-247-4L package for faster switching, clean gate waveforms 3 4 Typical applications w EV charging Part Number Package Marking w PV inverters UF3C120150K4S TO-247-4L UF3C120150K4S w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C120150K4S Rev. A, April 2019 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 1200 V DS Gate-source voltage V DC -25 to +25 V GS T = 25C 18.4 A C 1 I Continuous drain current D T = 100C 13.8 A C 2 T = 25C Pulsed drain current I 38 A C DM 3 L=15mH, I =2A E 30 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 166.7 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.7 0.9 C/W qJC Datasheet: UF3C120150K4S Rev. A, April 2019 2