DMP3099LQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage I max D BV R max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 65m V = -10V -3.8A GS Low Input/Output Leakage -30V 99m V = -4.5V -3.0A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications This MOSFET is designed to meet the stringent requirements of Mechanical Data Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters e3 Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.009 grams (Approximate) SOT23 D D G G S S Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMP3099LQ-7 SOT23 3000/Tape & Reel DMP3099LQ-13 SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3099LQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -3.8 A Drain Current (Note 6) V = -10V I A GS D State -2.9 T = +70C A Pulsed Drain Current (Note 7) -11 A I DM I AS E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 1.08 W P D 115 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 6) R A JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -800 nA I V = -30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1.0 -2.1 V V = V , I = -250A GS(TH) DS GS D V = -10V, I = -3.8A 65 GS D Static Drain-Source On-Resistance m R DS(ON) 99 V = -4.5V, I = -3.0A GS D Forward Transfer Admittance Y 3.6 S V = -5V, I = -2.7A fs DS D Diode Forward Voltage -1.26 V VSD VGS = 0V, IS = -2.7A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 563 pF Ciss V = -25V, V = 0V, DS GS Output Capacitance 48 pF C oss f = 1.0MHz Reverse Transfer Capacitance 41 pF C rss Gate Resistance 10.3 R V = 0V, V = 0V, f = 1MHz G GS DS SWITCHING CHARACTERISTICS (Note 9) V = -15V, V = -4.5V, DS GS 5.2 Total Gate Charge Q I = -3.8A g D 11 nC V = -15V, V = -10V, DS GS Gate-Source Charge Q 1.7 gs I = -3.8A D Gate-Drain Charge Q 1.9 gd Turn-On Delay Time 4.8 t D(ON) Rise Time 5.0 t V = -15V, V = -10V, R DS GS ns Turn-Off Delay Time 31 I = -1A, R = 6.0 t D G D(OFF) Fall Time 15 t F 2 Notes: 6. Device mounted on FR-4 PCB on 2 oz., 0.5 inch copper pads and t 5 sec. 7. Pulse width 10s, Duty Cycle 1%. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 6 DMP3099LQ October 2017 Diodes Incorporated www.diodes.com Document number: DS40182 Rev. 1 - 2 NEW PRODUCT