DMN62D1LFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D BV R DSS DS(ON) T = +25C A Low Input Capacitance Fast Switching Speed 2 V = 4V 407mA GS Low Input/Output Leakage 60V 2.5 V = 2.5V 364mA GS ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: X1-DFN1006-3 This new generation MOSFET is designed to minimize the on-state Case Material: Molded Plastic,Gree Molding Compound resistance (R ) yet maintain superior switching performance, DS(ON) UL Flammability Classification Rating 94V-0 which makes it ideal for high-efficiency power management Moisture Sensitivity: Level 1 per J-STD-020 applications. Terminals: Finish NiPdAu over Copper Leadframe. e4 Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.001 grams (Approximate) Power Management Functions D Battery Operated Systems and Solid-State Relays X1-DFN1006-3 G G D S Gate Protection S Diode ESD PROTECTED Top View Equivalent Circuit Bottom View Pin-Out Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DMN62D1LFB-7B NQ 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN62D1LFB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 407 A Continuous Drain Current (Note 5) V = 4V I mA GS D State 325 T = +70C A Pulsed Drain Current (Note 6) 1 A I DM Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) P 0.5 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 251 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise stated.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 60V, V = 0V J DSS DS GS 100 nA V = 5V, V = 0V GS DS Gate-Source Leakage I 500 nA V = 10V, V = 0V GSS GS DS 2.0 A VGS = 15V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.6 1.0 V VGS(TH) VDS = VGS, ID = 250A 1.3 2 V = 4V, I = 100mA GS D Static Drain-Source On-Resistance 1.5 2.5 R V = 2.5V, I = 50mA DS(ON) GS D 1.9 3 V = 1.8V, I = 50mA GS D Diode Forward Voltage 0.9 1.3 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 32 64 C iss VDS = 25V, VGS = 0V, Output Capacitance C 4.4 9 pF oss f = 1.0MHz Reverse Transfer Capacitance C 2.9 6 rss Gate Resistance R 126 250 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 0.45 0.9 g V = 4.5V, V = 10V, GS DS Gate-Source Charge 0.08 0.2 nC Qgs I = 250mA D Gate-Drain Charge 0.08 0.2 Q gd Turn-On Delay Time 3.4 10 ns t D(ON) V = 10V, V = 30V, GS DS Turn-On Rise Time 3.4 10 ns t R R = 150, R = 25, L G Turn-Off Delay Time 26.4 45 ns t D(OFF) I = 200mA D Turn-Off Fall Time 16.3 30 ns t F Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 May 2018 DMN62D1LFB www.diodes.com Diodes Incorporated Document number: DS40517 Rev. 3 - 2 NEW PRODUCT ADAVDAVNACNECDE I NINFFOORRMMAATTIOIONN