TPH3205WSBQA Not recommended for new designs see TP65H050WSQA AEC-Q101 Qualified 650V GaN FET in TO-247 (source tab) Description Features The TPH3205WSBQA 650V, 49m Gallium Nitride (GaN) JEDEC and AEC-Q101 qualified GaN technology FET is a normally-off automotive (AEC-Q101) qualified Dynamic RDS(on)eff production tested device. It combines state-of-the-art high voltage GaN HEMT Robust design, defined by and low voltage silicon MOSFET technologiesoffering Intrinsic lifetime tests superior reliability and performance. Wide gate safety margin Transient over-voltage capability Transphorm GaN offers improved efficiency over silicon, Very low Q RR through lower gate charge, lower crossover loss, and smaller Reduced crossover loss reverse recovery charge. RoHS compliant and Halogen-free packaging Related Literature Benefits AN0009: Recommended External Circuitry for GaN FETs Enables AC-DC bridgeless totem-pole PFC designs AN0003: Printed Circuit Board Layout and Probing Increased power density AN0010: Paralleling GaN FETs Reduced system size and weight Overall lower system cost Achieves increased efficiency in both hard- and soft- Ordering Information switched circuits Package Easy to drive with commonly-used gate drivers Part Number Package Configuration GSD pin layout improves high speed design TPH3205WSBQA 3 lead TO-247 Source Applications Automotive Datacom TPH3205WSBQA TO-247 Broad industrial (top view) PV inverter S Servo motor Key Specifications V (V) 650 DSS V (V) 800 (TR)DSS RDS(on)eff (m) max* 62 G S Q (nC) typ 136 D RR QG (nC) typ 28 * Dynamic on-resistance see Figures 19 and 20 Common Topology Power Recommendations CCM bridgeless totem-pole* 2983W max Hard-switched inverter** 3581W max Conditions: FSW=45kHz TJ=115C THEATSINK=90C insulator between device and heatsink (6 mil Sil-Pad K-10) power de-rates at lower voltages with constant current Cascode Schematic Symbol Cascode Device Structure * V =230V V =390V IN AC OUT DC ** V =380V V =240V IN DC OUT AC October 31, 2019 2017 Transphorm Inc. Subject to change without notice. tph3205wsbqa.2 1 TPH3205WSBQA Absolute Maximum Ratings (T =25C unless otherwise stated.) c Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55C to 150C) 650 a V Transient drain to source voltage 800 V (TR)DSS V Gate to source voltage 18 GSS P Maximum power dissipation T =25C 125 W D C b Continuous drain current T =25C 35 A C I D b Continuous drain current TC=100C 22 A I Pulsed drain current (pulse width: 10s) 150 A DM c (di/dt) Reverse diode di/dt, repetitive 1500 A/s RDMC d (di/dt) Reverse diode di/dt, transient 2900 A/s RDMT T Case -55 to +150 C C Operating temperature T Junction -55 to +150 C J T Storage temperature -55 to +150 C S e T Soldering peak temperature 260 C SOLD Notes: a. In off-state, spike duty cycle D<0.01, spike duration <1s b. For increased stability at high current operation, see Circuit Implementation on page 3 c. Continuous switching operation d. 300 pulses per second for a total duration 20 minutes e. For 10 sec., 1.6mm from the case Thermal Resistance Symbol Parameter Typical Unit RJC Junction-to-case 1 C/W RJA Junction-to-ambient 40 C/W October 31, 2019 transphormusa.com tph3205wsbqa.2 2