TP90H180PS Discontinued 900V GaN FET in TO-220 (source tab) Description Features The TP90H180PS 900V, 170m Gallium Nitride (GaN) FET JEDEC qualified GaN technology is a normally-off device. It combines state-of-the-art high Dynamic RDS(on)eff production tested voltage GaN HEMT and low voltage silicon MOSFET Robust design, defined by technologiesoffering superior reliability and performance. Intrinsic lifetime tests Wide gate safety margin Transphorm GaN offers improved efficiency over silicon, Transient over-voltage capability through lower gate charge, lower crossover loss, and smaller Very low Q RR reverse recovery charge. Reduced crossover loss RoHS compliant and Halogen-free packaging Related Literature AN0009: Recommended External Circuitry for GaN FETs Benefits AN0003: Printed Circuit Board Layout and Probing Enables AC-DC bridgeless totem-pole PFC designs AN0010: Paralleling GaN FETs Increased power density Reduced system size and weight Overall lower system cost Achieves increased efficiency in both hard- and soft- Ordering Information switched circuits Package Easy to drive with commonly-used gate drivers Part Number Package Configuration GSD pin layout improves high speed design TP90H180PS 3 lead TO-220 Source Applications Datacom TP90H180PS Broad industrial TO-220 PV inverter (top view) Servo motor S Key Specifications V (V) 900 DSS V (V) 1000 (TR)DSS R (m) max* 205 DS(on)eff Q (nC) typ 49 G RR S D Q (nC) typ 10 G * Dynamic on-resistance see Figures 19 and 20 Cascode Schematic Symbol Cascode Device Structure Mar. 7, 2021 2017 Transphorm Inc. Subject to change without notice. tp90h180ps.1 1 TP90H180PS (Discontinued) Absolute Maximum Ratings (Tc=25C unless otherwise stated.) Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55C to 150C) 900 a V Transient drain to source voltage 1000 V (TR)DSS V Gate to source voltage 18 GSS P Maximum power dissipation T =25C 78 W D C b Continuous drain current T =25C 15 A C I D b Continuous drain current TC=100C 10 A IDM Pulsed drain current (pulse width: 10s) 58 A c (di/dt) Reverse diode di/dt, repetitive 1200 A/s RDMC d (di/dt) Reverse diode di/dt, transient 2400 A/s RDMT T Case -55 to +150 C C Operating temperature T Junction -55 to +150 C J T Storage temperature -55 to +150 C S e T Soldering peak temperature 260 C SOLD Notes: a. In off-state, spike duty cycle D<0.01, spike duration <1s b. For increased stability at high current operation, see Circuit Implementation on page 3 c. Continuous switching operation d. 300 pulses per second for a total duration 20 minutes e. For 10 sec., 1.6mm from the case Thermal Resistance Symbol Parameter Typical Unit R Junction-to-case 1.6 C/W JC R Junction-to-ambient 62 C/W JA Mar. 7, 2021 transphormusa.com tp90h180ps.1 2