X-On Electronics has gained recognition as a prominent supplier of RQ5L015SPTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ5L015SPTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ5L015SPTL ROHM

RQ5L015SPTL electronic component of ROHM
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See Product Specifications
Part No.RQ5L015SPTL
Manufacturer: ROHM
Category: MOSFETs
Description: P-Channel 60 V 1.5A (Ta) 1W (Ta) Surface Mount TSMT3
Datasheet: RQ5L015SPTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.243 ea
Line Total: USD 1.21 
Availability - 790
Ship by Tue. 19 Nov to Fri. 22 Nov
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
790
Ship by Tue. 19 Nov to Fri. 22 Nov
MOQ : 5
Multiples : 5
5 : USD 0.243
50 : USD 0.1932
150 : USD 0.1719
500 : USD 0.1453
3000 : USD 0.1334
6000 : USD 0.1264

103882
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4473
10 : USD 0.3358
100 : USD 0.2541
500 : USD 0.2047
1000 : USD 0.184
3000 : USD 0.1587
9000 : USD 0.1552
24000 : USD 0.1518
45000 : USD 0.1507

10690
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 355
Multiples : 1
355 : USD 0.2873
500 : USD 0.2769
1000 : USD 0.2679
2500 : USD 0.26
5000 : USD 0.253
10000 : USD 0.2469

36689
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 151
Multiples : 1
151 : USD 0.2697

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Height
Length
Product
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ5L015SPTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5L015SPTL and other electronic components in the MOSFETs category and beyond.

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RQ5L015SP Pch -60V -1.5A Small Signal MOSFET Datasheet llOutline SOT-346T V -60V DSS SC-96 R (Max.) 280m DS(on) TSMT3 I 1.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) High Power small mold Package (TSMT3) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking FA llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -60 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 20 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170629 - Rev.005 RQ5L015SP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -60 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -60V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.2 - -3.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.0 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -1.5A - 200 280 GS D Static drain - source *4 R V = -4.5V, I = -1.5A - 240 340 m DS(on) GS D on - state resistance V = -4.0V, I = -1.5A - 255 360 GS D R Gate resistance f = 1MHz, open drain - 12 - G Forward Transfer *4 Y V = -10V, I = -1.5A 1.8 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic boad (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20170629 - Rev.005 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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