X-On Electronics has gained recognition as a prominent supplier of RQ5E070BNTCL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ5E070BNTCL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ5E070BNTCL ROHM

RQ5E070BNTCL electronic component of ROHM
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Part No.RQ5E070BNTCL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 30V 7Ad Si MOSFET
Datasheet: RQ5E070BNTCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5315 ea
Line Total: USD 0.53 
Availability - 1411
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1411
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5315
10 : USD 0.4921
100 : USD 0.3462
500 : USD 0.2865
1000 : USD 0.2727
3000 : USD 0.2577
9000 : USD 0.2535

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ5E070BNTCL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5E070BNTCL and other electronic components in the MOSFETs category and beyond.

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RQ5E070BN Datasheet Nch 30V 7A Middle Power MOSFET llOutline SOT-346T V 30V DSS SC-96 R (Max.) 16.1m DS(on) TSMT3 I 7A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT3). 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Taping code TCL Marking BA llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 Continuous drain current I 7 A D *2 I Pulsed drain current 18 A DP V Gate - Source voltage 20 V GSS *3 Avalanche current, single pulse I 7.0 A AS *3 E Avalanche energy, single pulse 17.5 mJ AS *4 P 1.0 W D Power dissipation *5 P 0.76 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002 RQ5E070BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 125 /W thJA Thermal resistance, junction - ambient *5 R - - 165 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V V = V , I = 1mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 7A - 12.4 16.1 GS D Static drain - source *6 R m DS(on) on - state resistance V = 4.5V, I = 7A - 16.5 20.4 GS D R Gate resistance f = 1MHz, open drain - 2.6 - G Forward Transfer *6 Y V = 5V, I = 7A 4.5 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.5mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic boad (30300.8mm) *5 Mounted on a FR4 (25250.8mm) *6 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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