X-On Electronics has gained recognition as a prominent supplier of RQ3E180AJTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3E180AJTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3E180AJTB ROHM

RQ3E180AJTB electronic component of ROHM
RQ3E180AJTB ROHM
RQ3E180AJTB MOSFETs
RQ3E180AJTB  Semiconductors

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See Product Specifications
Part No. RQ3E180AJTB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET MOSFET for switching application that features Low on-resistance
Datasheet: RQ3E180AJTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3871 ea
Line Total: USD 1.94 
Availability - 9
Ship by Mon. 21 Apr to Thu. 24 Apr
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
9
Ship by Mon. 21 Apr to Thu. 24 Apr
MOQ : 5
Multiples : 5
5 : USD 0.3871
50 : USD 0.3001
150 : USD 0.2028
500 : USD 0.1669
3000 : USD 0.1508
6000 : USD 0.1413

5756
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ : 1
Multiples : 1
1 : USD 0.8161
10 : USD 0.6891
100 : USD 0.4926
500 : USD 0.4447
3000 : USD 0.4437

1186
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ : 1
Multiples : 1
1 : USD 1.316
10 : USD 1.1704
25 : USD 1.0528
39 : USD 0.4774
105 : USD 0.4508

   
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We are delighted to provide the RQ3E180AJTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E180AJTB and other electronic components in the MOSFETs category and beyond.

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RQ3E180AJ Datasheet Nch 30V 18A Middle Power MOSFET llOutline HSMT8 V 30V DSS R (Max.) 4.5m DS(on) I 30A D P 2W D llInner circuit llFeatures 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 3000 Taping code TB Marking E180AJ llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *4 T = 25C I 30 A c D Continuous drain current T = 25C I 18 A a D *1 I Pulsed drain current 72 A D,pulse V Gate - Source voltage 12 V GSS *2 E Avalanche energy, single pulse 24.6 mJ AS *2 I Avalanche current 18 A AS *3 P 2 W D Power dissipation *4 P 30 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20150730 - Rev.002 RQ3E180AJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - 62.5 - /W thJA *4 R Thermal resistance, junction - case - 4.17 - /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 18 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 24V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V V = V , I = 11mA Gate threshold voltage 0.5 - 1.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -2.0 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 18A - 3.5 4.5 GS D Static drain - source *5 R m DS(on) on - state resistance V = 2.5V, I = 18A - 4.5 5.8 GS D Forward Transfer *5 Y V = 5V, I = 18A 24 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 100uH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *3 Mounted on a ceramic boad (30300.8mm) *4 Tc=25 *5 Pulsed www.rohm.com 2/11 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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