X-On Electronics has gained recognition as a prominent supplier of RQ3G100GNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3G100GNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3G100GNTB ROHM

RQ3G100GNTB electronic component of ROHM
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See Product Specifications
Part No.RQ3G100GNTB
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RQ3G100GNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6226 ea
Line Total: USD 0.62 
Availability - 13677
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1318
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4195
10 : USD 0.3352
30 : USD 0.2989
100 : USD 0.2549
500 : USD 0.2337
1000 : USD 0.2223

13677
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6226
10 : USD 0.4004
100 : USD 0.2695
500 : USD 0.2134
1000 : USD 0.1958
3000 : USD 0.1617

2890
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 274
Multiples : 1
274 : USD 0.4804

2727
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 274
Multiples : 1
274 : USD 0.3728
500 : USD 0.3595
1000 : USD 0.3478
2500 : USD 0.3375

3298
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 148
Multiples : 1
148 : USD 0.2747
500 : USD 0.2584
1000 : USD 0.2177
2000 : USD 0.2162
3000 : USD 0.2145

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ3G100GNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3G100GNTB and other electronic components in the MOSFETs category and beyond.

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RQ3G100GN Nch 40V 27A Power MOSFET Datasheet llOutline V 40V DSS R (Max.) 14.3m DS(on) HSMT8 I 27A D P 15W D llInner circuit llFeatures 1) Low on - resistance 2) High Power Package (HSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 3000 Taping code TB Marking G100GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 T = 25C I 27 A c D Continuous drain current T = 25C I 10 A a D *2 I Pulsed drain current 40 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 10 A AS *3 E Avalanche energy, single pulse 15 mJ AS *1 P 15 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20171215 - Rev.003 RQ3G100GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 8.3 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 26.2 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = V , I = 1mA 1.2 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -4.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 10A - 11.0 14.3 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 10A - 14.1 18.3 GS D R Gate resistance f=1MHz, open drain - 2.3 - G Forward Transfer *5 Y V = 5V, I = 10A 7.5 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.2mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20171215 - Rev.003 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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