X-On Electronics has gained recognition as a prominent supplier of RQ3E160ADTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3E160ADTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3E160ADTB ROHM

RQ3E160ADTB electronic component of ROHM
RQ3E160ADTB ROHM
RQ3E160ADTB MOSFETs
RQ3E160ADTB  Semiconductors

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See Product Specifications
Part No. RQ3E160ADTB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 30V 16A Middle Power MOSFET
Datasheet: RQ3E160ADTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5477 ea
Line Total: USD 0.55 
Availability - 5500
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
96
Ship by Mon. 21 Apr to Thu. 24 Apr
MOQ : 1
Multiples : 1
1 : USD 1.2451
10 : USD 1.1285
30 : USD 0.9114
100 : USD 0.7644
500 : USD 0.7392
1000 : USD 0.7285

5500
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ : 1
Multiples : 1
1 : USD 0.5477
10 : USD 0.4509
100 : USD 0.3248
500 : USD 0.2767
1000 : USD 0.2702
3000 : USD 0.2585

1939
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 210
Multiples : 1
210 : USD 0.4908
250 : USD 0.471
500 : USD 0.4541
1000 : USD 0.4223

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the RQ3E160ADTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E160ADTB and other electronic components in the MOSFETs category and beyond.

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RQ3E160AD Datasheet Nch 30V 16A Middle Power MOSFET llOutline V 30V DSS R (Max.) 4.5m DS(on) HSMT8 I 16A D P 2W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package. 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 3000 Taping code TB Marking E160AD llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS I Continuous drain current 16 A D *2 I Pulsed drain current 64 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 16 A AS *3 E Avalanche energy, single pulse 23 mJ AS *4 P Power dissipation 2 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RQ3E160AD Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - ambient - 62.5 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 20.84 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.25 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 16A - 3.5 4.5 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 16A - 5.0 7.0 GS D Forward Transfer *5 Y V = 10V, I = 8A 7.5 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 10H, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *4 Mounted on a ceramic boad (30300.8mm) *5 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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