X-On Electronics has gained recognition as a prominent supplier of RQ3E160ADTB MOSFET across the USA, India, Europe, Australia, and various other global locations. RQ3E160ADTB MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RQ3E160ADTB ROHM

RQ3E160ADTB electronic component of ROHM
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See Product Specifications
Part No.RQ3E160ADTB
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET Nch 30V 16A Middle Power MOSFET
Datasheet: RQ3E160ADTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7095 ea
Line Total: USD 0.71

Availability - 2798
Ship by Tue. 16 Jul to Thu. 18 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
97
Ship by Wed. 17 Jul to Mon. 22 Jul
MOQ : 1
Multiples : 1
1 : USD 0.7525
10 : USD 0.6816
30 : USD 0.6419
100 : USD 0.5981
500 : USD 0.5782
1000 : USD 0.5697

2798
Ship by Tue. 16 Jul to Thu. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 0.7095
10 : USD 0.5624
100 : USD 0.4335
500 : USD 0.3784
1000 : USD 0.3312
3000 : USD 0.2794

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the RQ3E160ADTB from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E160ADTB and other electronic components in the MOSFET category and beyond.

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RQ3E160AD Datasheet Nch 30V 16A Middle Power MOSFET llOutline V 30V DSS R (Max.) 4.5m DS(on) HSMT8 I 16A D P 2W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package. 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 3000 Taping code TB Marking E160AD llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS I Continuous drain current 16 A D *2 I Pulsed drain current 64 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 16 A AS *3 E Avalanche energy, single pulse 23 mJ AS *4 P Power dissipation 2 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RQ3E160AD Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - ambient - 62.5 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 20.84 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.25 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 16A - 3.5 4.5 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 16A - 5.0 7.0 GS D Forward Transfer *5 Y V = 10V, I = 8A 7.5 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 10H, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *4 Mounted on a ceramic boad (30300.8mm) *5 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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