X-On Electronics has gained recognition as a prominent supplier of RQ3E100MNTB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3E100MNTB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3E100MNTB1 ROHM

RQ3E100MNTB1 electronic component of ROHM
RQ3E100MNTB1 ROHM
RQ3E100MNTB1 MOSFETs
RQ3E100MNTB1  Semiconductors

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See Product Specifications
Part No. RQ3E100MNTB1
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 30 V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Datasheet: RQ3E100MNTB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2038 ea
Line Total: USD 1.2 
Availability - 2407
Ship by Mon. 05 May to Wed. 07 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2407
Ship by Mon. 05 May to Wed. 07 May
MOQ : 1
Multiples : 1
1 : USD 1.2038
10 : USD 0.9648
100 : USD 0.7073
500 : USD 0.6171
1000 : USD 0.517
3000 : USD 0.4939
6000 : USD 0.4796
9000 : USD 0.4741
24000 : USD 0.4587

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Transistor Type
Brand
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ3E100MNTB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E100MNTB1 and other electronic components in the MOSFETs category and beyond.

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RQ3E100MN Nch 30V 10A Power MOSFET Datasheet l Outline V 30V DSS HSMT8 R at 10V (Max.) 12.3mW DS(on) R at 4.5V (Max.) 16.8mW DS(on) I 10A D P 2.0W D lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating RoHS compliant (4) Gate (8) Drain *1 ESD PROTECTION DIODE 4) Halogen Free *2 BODY DIODE 5) 100% Rg and UIS Tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 12 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TB1 Marking E100MN lAbsolute maximum ratings(T = 25C) ,unless otherwise specified a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 Continuous drain current A I 10 D *2 Pulsed drain current I 40 A D,pulse V Gate - Source voltage 20 V GSS *3 Power dissipation 2.0 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 1/10 Not Recommended for New DesignsData Sheet RQ3E100MN lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 62.5 C/W thJA Thermal resistance, junction - ambient R - - - C/W thJC lElectrical characteristics(T = 25C) ,unless otherwise specified a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I =1mA Breakdown voltage (BR)DSS D - 33.7 - mV/C temperature coefficient T referenced to 25C j Zero gate voltage drain current I V = 30V, V = 0V - - 1 mA DSS DS GS I Gate - Source leakage current V = 20V, V = 0V - - 10 mA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS (th) DS D V Gate threshold voltage I =1mA (GS)th D - - mV/C -4.6 temperature coefficient T referenced to 25C j V =10V, I =10A - 8.8 12.3 GS D Static drain - source *4 R mW DS(on) on - state resistance V =4.5V, I =10A - 12 16.8 GS D Gate input resistannce R f = 1MHz, open drain - 5.8 - W G *4 V =10V, I =10A Transconductance g 8.0 - - S DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board. (30300.8mm) *4 Pulsed www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 2/10 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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