X-On Electronics has gained recognition as a prominent supplier of RQ3E100MNTB1 MOSFET across the USA, India, Europe, Australia, and various other global locations. RQ3E100MNTB1 MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RQ3E100MNTB1 ROHM

RQ3E100MNTB1 electronic component of ROHM
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See Product Specifications
Part No.RQ3E100MNTB1
Manufacturer: ROHM
Category: MOSFET
Description: N-Channel 30 V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Datasheet: RQ3E100MNTB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3635 ea
Line Total: USD 1.36

Availability - 2456
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2407
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ : 1
Multiples : 1
1 : USD 1.1075
10 : USD 0.9246
100 : USD 0.7394
500 : USD 0.6451
1000 : USD 0.5405
3000 : USD 0.5164
6000 : USD 0.5002
9000 : USD 0.4956
24000 : USD 0.4796

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Transistor Type
Brand
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ3E100MNTB1 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E100MNTB1 and other electronic components in the MOSFET category and beyond.

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RQ3E100MN Nch 30V 10A Power MOSFET Datasheet l Outline V 30V DSS HSMT8 R at 10V (Max.) 12.3mW DS(on) R at 4.5V (Max.) 16.8mW DS(on) I 10A D P 2.0W D lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating RoHS compliant (4) Gate (8) Drain *1 ESD PROTECTION DIODE 4) Halogen Free *2 BODY DIODE 5) 100% Rg and UIS Tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 12 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TB1 Marking E100MN lAbsolute maximum ratings(T = 25C) ,unless otherwise specified a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 Continuous drain current A I 10 D *2 Pulsed drain current I 40 A D,pulse V Gate - Source voltage 20 V GSS *3 Power dissipation 2.0 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 1/10 Not Recommended for New DesignsData Sheet RQ3E100MN lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 62.5 C/W thJA Thermal resistance, junction - ambient R - - - C/W thJC lElectrical characteristics(T = 25C) ,unless otherwise specified a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I =1mA Breakdown voltage (BR)DSS D - 33.7 - mV/C temperature coefficient T referenced to 25C j Zero gate voltage drain current I V = 30V, V = 0V - - 1 mA DSS DS GS I Gate - Source leakage current V = 20V, V = 0V - - 10 mA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS (th) DS D V Gate threshold voltage I =1mA (GS)th D - - mV/C -4.6 temperature coefficient T referenced to 25C j V =10V, I =10A - 8.8 12.3 GS D Static drain - source *4 R mW DS(on) on - state resistance V =4.5V, I =10A - 12 16.8 GS D Gate input resistannce R f = 1MHz, open drain - 5.8 - W G *4 V =10V, I =10A Transconductance g 8.0 - - S DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board. (30300.8mm) *4 Pulsed www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 2/10 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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