X-On Electronics has gained recognition as a prominent supplier of RQ3E100GNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3E100GNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3E100GNTB ROHM

RQ3E100GNTB electronic component of ROHM
RQ3E100GNTB ROHM
RQ3E100GNTB MOSFETs
RQ3E100GNTB  Semiconductors

Images are for reference only
See Product Specifications
Part No. RQ3E100GNTB
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
Datasheet: RQ3E100GNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6762 ea
Line Total: USD 0.68 
Availability - 1192
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1192
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.6762
10 : USD 0.4463
100 : USD 0.268
500 : USD 0.2013
1000 : USD 0.1826
3000 : USD 0.143
9000 : USD 0.1364
24000 : USD 0.1331

2948
Ship by Fri. 02 May to Thu. 08 May
MOQ : 243
Multiples : 1
243 : USD 0.6981
500 : USD 0.4602
1000 : USD 0.2964
3000 : USD 0.2838

2910
Ship by Fri. 02 May to Thu. 08 May
MOQ : 343
Multiples : 1
343 : USD 0.6625

2895
Ship by Fri. 02 May to Thu. 08 May
MOQ : 343
Multiples : 1
343 : USD 0.2976
500 : USD 0.2868
1000 : USD 0.2774
2500 : USD 0.2589

355
Ship by Fri. 02 May to Thu. 08 May
MOQ : 343
Multiples : 1
343 : USD 0.2976

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ3E100GNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E100GNTB and other electronic components in the MOSFETs category and beyond.

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RQ3E100GN Datasheet Nch 30V 21A Middle Power MOSFET llOutline V 30V DSS R (Max.) 11.7m DS(on) HSMT8 I 21A D P 15W D llInner circuit llFeatures 1) Low on - resistance. 2) High power package (HSMT8). 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested. llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 3000 Taping code TB Marking E100GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 21 A c D Continuous drain current T = 25C I 10 A a D *2 I Pulsed drain current 40 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 10 A AS *3 E Avalanche energy, single pulse 7.6 mJ AS *1 P 15 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160517 - Rev.002 RQ3E100GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 8.3 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 28 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 24V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = 1mA 1.2 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3.87 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 10A - 8.9 11.7 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 10A - 12.0 20.0 GS D R Gate resistance f=1MHz, open drain - 2.4 - G Forward Transfer *5 Y V = 5V, I = 10A 8 - - S fs DS D Admittance *1 Tc = 25 , Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20160517 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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