QH8MA2 Datasheet 30V Nch+Pch Small Signal MOSFET llOutline Symbol Tr1:Nch Tr2:Pch V 30V -30V DSS TSMT8 R (Max.) 35m 80m DS(on) I 4.5A 3.0A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (TSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TCR Marking MA2 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 30 -30 V DSS I Continuous drain current 4.5 3.0 A D *1 I Pulsed drain current 12 12 A DP V Gate - Source voltage 20 20 V GSS *2 I Avalanche current, single pulse 4.5 -3.0 A AS *2 E Avalanche energy, single pulse 1.5 0.3 mJ AS *3 P 1.5 D Power dissipation total W *4 P 1.1 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/19 20180608 - Rev.002 2018 ROHM Co., Ltd. All rights reserved. QH8MA2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 83.3 thJA Thermal resistance, junction - ambient (total) /W *4 R - - 113 thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. Tr1 V = 0V, I = 1mA 30 - - GS D Drain - Source breakdown V V (BR)DSS voltage V = 0V, I = -1mA Tr2 -30 - - GS D V I = 1mA, referenced to 25 Tr1 - 21 - (BR)DSS D Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 - -22 - D V = 30V, V = 0V Tr1 - - 1 DS GS Zero gate voltage I A DSS drain current V = -30V, V = 0V Tr2 - - -1 DS GS Tr1 V = 20V, V = 0V - - 100 GS DS Gate - Source I nA GSS leakage current Tr2 V = 20V, V = 0V - - 100 GS DS Tr1 V = 10V, I = 1mA 1.0 - 2.5 DS D Gate threshold V V GS(th) voltage V = -10V, I = -1mA Tr2 -1.0 - -2.5 DS D I = 1mA, referenced to 25 V Tr1 - -3 - D GS(th) Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 2.9 - j D V = 10V, I = 4.5A - 25 35 GS D Tr1 V = 4.5V, I = 4.5A - 40 56 GS D Static drain - source *5 R m DS(on) on - state resistance V = -10V, I = -3A - 55 80 GS D Tr2 V = -4.5V, I = -3A - 80 115 GS D Tr1 - 3 - R Gate resistance f=1MHz, open drain G Tr2 - 10 - V = 5V, I = 4.5A Tr1 1.4 - - DS D Forward Transfer *5 Y S fs Admittance V = -5V, I = -3A Tr2 1.9 - - DS D *1 Pw 10s, Duty cycle 1% *2 Tr1: L 100H, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j Tr2: L 100H, V = -15V, R = 25, Starting T = 25 Fig.6-1,6-2 DD G j *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (25250.8mm) *5 Pulsed www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 2/19 20180608 - Rev.002