X-On Electronics has gained recognition as a prominent supplier of QS5U17TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS5U17TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QS5U17TR ROHM

QS5U17TR electronic component of ROHM
QS5U17TR ROHM
QS5U17TR MOSFETs
QS5U17TR Semiconductors

Images are for reference only
See Product Specifications
Part No. QS5U17TR
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 30 V 2A (Ta) 900mW (Ta) Surface Mount TSMT5
Datasheet: QS5U17TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9512 ea
Line Total: USD 0.95 
Availability - 3881
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1

 QS5U17TR More Buying Options & Price Grid(s)

Availability Price Quantity
3881
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.9512
10 : USD 0.6875
100 : USD 0.4092
500 : USD 0.3245
1000 : USD 0.2893
3000 : USD 0.253
6000 : USD 0.2508
9000 : USD 0.2398

2861
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 240
Multiples : 1
240 : USD 0.4225
500 : USD 0.3276
1000 : USD 0.2834

97
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 100
Multiples : 1
100 : USD 1.0615

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QS5U17TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS5U17TR and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

QS5U17 Transistors 2.5V Drive Nch+SBD MOS FET QS5U17 z External dimensions (Unit : mm) z Structure Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) z Features 1) The QS5U17 combines Nch MOSFET with a 0~0.1 (1) (2) (3) Schottky barrier diode in a single TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switching. 3) Low voltage drive (2.5V). Each lead has same dimensions 4) The Independently connected Schottky barrier diode Abbreviated symbol : U17 has low forward voltage. z Applications Load switch, DC / DC conversion z Packaging specifications z Equivalent circuit Package Taping (5) (4) Type Code TR Basic ordering unit (pieces) 3000 QS5U17 2 1 (1) Gate (2) Source (1) (2) (3) (3) Anode (4) Cathode 1 ESD PROTECTION DIODE (5) Drain 2 BODY DIODE Rev.B 1/4 1.6 2.8 0.3~0.6QS5U17 Transistors z Absolute maximum ratings (Ta=25C) <MOSFET> Parameter Symbol Limits Unit V Drain-source voltage DSS 30 V Gate-source voltage VGSS 12 V Continuous ID 2.0 A Drain current 1 Pulsed I 8.0 A DP Continuous IS 0.8 A Source current 1 (Body diode) Pulsed ISP 3.2 A Channel temperature Tch 150 C 3 Power dissipation PD 0.9 W/ELEMENT <Di> Repetitive peak reverse voltage VRM 25 V Reverse voltage VR 20 V Forward current IF 1.0 A 2 I Forward current surge peak FSM 3.0 A Junction temperature Tj 150 C 3 Power dissipation PD 0.7 W/ELEMENT <MOSFET AND Di> 3 Total power dissipation PD 1.25 W / TOTAL Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 60Hz1cyc. 3 Mounted on a ceramic board z Electrical characteristics (Ta=25C) <MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage A IGSS 10 VGS=12V / VDS=0V Drain-source breakdown voltage V(BR) DSS 30 V ID=1mA, / VGS=0V Zero gate voltage drain current I 1 A V =30V / V =0V DSS DS GS Gate threshold voltage V 0.5 1.5 V V =10V / I =1mA GS (th) DS D 71 100 m ID=2.0A, VGS=4.5V Static drain-source on-state RDS (on) 76 107 m ID=2.0A, VGS=4V resistance 110 154 m I =2.0A, V =2.5V D GS Forward transfer admittance S Yfs 1.5 VDS=10V, ID=2.0A Input capacitance Ciss 175 pF VDS=10V Output capacitance C 50 pF V =0V oss GS Reverse transfer capacitance pF Crss 25 f=1MHz Turn-on delay time ns td (on) 8 ID=1.0A VDD 15V Rise time tr 10 ns VGS=4.5V Turn-off delay time t 21 ns d (off) RL=15 Fall time ns tf 8 RG=10 Total gate charge Qg 2.8 3.9 nC VDD 15V Gate-source charge Q 0.6 nC V =4.5V gs GS Gate-drain charge nC Qgd0.8 ID=2.0A Pulsed <Body diode (source-drain)> Forward voltage VSD 1.2 V IS=3.2A / VGS=0V Pulsed <Di> Forward voltage VF 0.45 V IF=1.0A Reverse current IR 200 A VR=20V Rev.B 2/4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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ROHM Semiconductor

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