QS5U17 Transistors 2.5V Drive Nch+SBD MOS FET QS5U17 z External dimensions (Unit : mm) z Structure Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) z Features 1) The QS5U17 combines Nch MOSFET with a 0~0.1 (1) (2) (3) Schottky barrier diode in a single TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switching. 3) Low voltage drive (2.5V). Each lead has same dimensions 4) The Independently connected Schottky barrier diode Abbreviated symbol : U17 has low forward voltage. z Applications Load switch, DC / DC conversion z Packaging specifications z Equivalent circuit Package Taping (5) (4) Type Code TR Basic ordering unit (pieces) 3000 QS5U17 2 1 (1) Gate (2) Source (1) (2) (3) (3) Anode (4) Cathode 1 ESD PROTECTION DIODE (5) Drain 2 BODY DIODE Rev.B 1/4 1.6 2.8 0.3~0.6QS5U17 Transistors z Absolute maximum ratings (Ta=25C) <MOSFET> Parameter Symbol Limits Unit V Drain-source voltage DSS 30 V Gate-source voltage VGSS 12 V Continuous ID 2.0 A Drain current 1 Pulsed I 8.0 A DP Continuous IS 0.8 A Source current 1 (Body diode) Pulsed ISP 3.2 A Channel temperature Tch 150 C 3 Power dissipation PD 0.9 W/ELEMENT <Di> Repetitive peak reverse voltage VRM 25 V Reverse voltage VR 20 V Forward current IF 1.0 A 2 I Forward current surge peak FSM 3.0 A Junction temperature Tj 150 C 3 Power dissipation PD 0.7 W/ELEMENT <MOSFET AND Di> 3 Total power dissipation PD 1.25 W / TOTAL Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 60Hz1cyc. 3 Mounted on a ceramic board z Electrical characteristics (Ta=25C) <MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage A IGSS 10 VGS=12V / VDS=0V Drain-source breakdown voltage V(BR) DSS 30 V ID=1mA, / VGS=0V Zero gate voltage drain current I 1 A V =30V / V =0V DSS DS GS Gate threshold voltage V 0.5 1.5 V V =10V / I =1mA GS (th) DS D 71 100 m ID=2.0A, VGS=4.5V Static drain-source on-state RDS (on) 76 107 m ID=2.0A, VGS=4V resistance 110 154 m I =2.0A, V =2.5V D GS Forward transfer admittance S Yfs 1.5 VDS=10V, ID=2.0A Input capacitance Ciss 175 pF VDS=10V Output capacitance C 50 pF V =0V oss GS Reverse transfer capacitance pF Crss 25 f=1MHz Turn-on delay time ns td (on) 8 ID=1.0A VDD 15V Rise time tr 10 ns VGS=4.5V Turn-off delay time t 21 ns d (off) RL=15 Fall time ns tf 8 RG=10 Total gate charge Qg 2.8 3.9 nC VDD 15V Gate-source charge Q 0.6 nC V =4.5V gs GS Gate-drain charge nC Qgd0.8 ID=2.0A Pulsed <Body diode (source-drain)> Forward voltage VSD 1.2 V IS=3.2A / VGS=0V Pulsed <Di> Forward voltage VF 0.45 V IF=1.0A Reverse current IR 200 A VR=20V Rev.B 2/4