Data Sheet Midium Power Transistors ( 30V / 3A) QS5Y1 Structure Dimensions (Unit : mm) PNP/NPN Silicon epitaxial planar transistor TSMT5 Features 1) Low saturation voltage, typically V = -0.40V (Max.) (I / I = -1A / -50mA) CE (sat) C B V = 0.40V (Max.) (I / I = 1A / 50mA) CE (sat) C B (1) Tr.1 Base 2) High speed switching (2) Emitter (3) Tr.2 Base (4) Tr.2 Collector Abbreviated symbol : Y01 (5) Tr.1 Collector Applications Low Frequency Amplifier Driver Packaging specifications Inner circuit (Unit : mm) Package TSMT5 (5) (4) Type Code TR Basic ordering unit (pieces) 3000 Tr.1 Tr.2 (1) Tr.1 Base (2) Emitter Absolute maximum ratings (Ta = 25 C) (3) Tr.2 Base (1) (2) (3) (4) Tr.2 Collector <Tr.1> (5) Tr.1 Collector Parameter Symbol Limits Unit Collector-base voltage V -30 V CBO Collector-emitter voltage V -30 V CEO Emitter-base voltage V -6 V EBO DC I -3 A C Collector current *1 Pulsed I -6 A CP <Tr.2> Parameter Symbol Limits Unit Collector-base voltage V 30 V CBO Collector-emitter voltage V 30 V CEO Emitter-base voltage V 6V EBO DC I 3A C Collector current Pulsed I *1 6A CP <Tr.1 and Tr.2> Parameter Symbol Limits Unit *2 P 0.5 W/Total D *3 Power dissipation P 1.25 W/Total D *3 P 0.9 W/Element D Junction temperature T 150 C j Range of storage temperature T -55 to 150 C stg *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 25 x 25 x 0.8 mm ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.02 - Rev.A 1/7QS5Y1 Data Sheet Electrical characteristics (Ta=25C) <Tr.1> Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BV -30 - - V I = -1mA CEO C BV -30 - - V I = -100A Collector-base breakdown voltage CBO C Emitter-base breakdown voltage BV -6 - - V I = -100A EBO E Collector cut-off current I -- -1 A V = -30V CBO CB Emitter cut-off current I -- -1 V = -4V A EBO EB *1 Collector-emitter staturation voltage V - -200 -400 mV I =-1A, I =-50mA CE(sat) C B h V = -2V, I = -500mA DC current gain 200 - 500 - FE CE C *1 V = -10V CE Transition frequency f - 300 - MHz T I =100mA, f=100MHz E V = -10V, I =0A CB E C Collector output capacitance -26 - pF ob f=1MHz Turn-on time t -35 - ns on *2 I = -1.5A, I = -150mA, C B1 t Storage time *2 - 210 - ns stg I =150mA, V ~ -12V B2 CC Fall time t *2 -15 - ns f *1 Pulsed *2 See switching time test circuit <Tr.2> Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BV 30 - - V I = 1mA CEO C BV I = 100A Collector-base breakdown voltage 30 - - V CBO C Emitter-base breakdown voltage BV 6- - V I = 100A EBO E Collector cut-off current I -- 1 A V = 30V CBO CB I V = 4V Emitter cut-off current -- 1 A EBO EB *1 Collector-emitter staturation voltage V - 200 400 mV I = 1A, I = 50mA CE(sat) C B DC current gain h 200 - 500 - V = 2V, I = 500mA FE CE C V = 10V *1 CE Transition frequency f - 270 - MHz T I =-100mA, f=100MHz E = 10V, I =0A V CB E C Collector output capacitance -16 -pF ob f=1MHz Turn-on time t -25 - ns on *2 I = 1.5A, I = 150mA, C B1 t Storage time *2 - 300 - ns stg I =-150mA, V ~ 12V B2 CC Fall time t *2 -20 - ns f *1 Pulsed *2 See switching time test circuit www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.02 - Rev.A 2/7