QS5U34TR ROHM

QS5U34 Transistors 1.8V Drive Nch+SBD MOSFET QS5U34 z Dimensions (Unit : mm) z Structure Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) z Features 1) The QS5U34 combines Nch MOSFET with a 0~0.1 (2) (3) (1) Schottky barrier diode in a single TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switching. 3) Low voltage drive (1.8V). Each lead has same dimensions 4) The Independently connected Schottky barrier diode Abbreviated symbol : U34 has low forward voltage. z Applications Load switch, DC / DC conversion z Packaging specifications z Equivalent circuit Package Taping (5) (4) Type Code TR 3000 Quantity (pcs) QS5U34 2 1 (1)Gate (2)Source (1) (2) (3) (3)Anode (4)Cathode 1 ESD protection diode (5)Drain 2 Body diode 20190527-Rev. 0021/4 1.6 2.8 0.3~0.6QS5U34 Transistors z Absolute maximum ratings (Ta=25C) <MOSFET> Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 10 V Continuous I 1.5 A D Drain current 1 Pulsed IDP 3.0 A Continuous IS 0.6 A Source current 1 (Body diode) Pulsed I 2.4 A SP Channel temperature Tch 150 C 3 Power dissipation PD 0.9 W/ELEMENT <Di> Repetitive peak reverse voltage V 30 V RM Reverse voltage VR 20 V Forward current IF 0.5 A 2 Forward current surge peak I 2.0 A FSM Junction temperature Tj 150 C 3 Power dissipation PD 0.7 W/ELEMENT <MOSFET AND Di> 3 Total power dissipation PD 1.25 W / TOTAL Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 60Hz1cyc. 3 Mounted on a ceramic board z Electrical characteristics (Ta=25C) <MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=10V / VDS=0V Drain-source breakdown voltage V 20 V I =1mA, / V =0V (BR) DSS D GS Zero gate voltage drain current A IDSS 1 VDS=20V / VGS=0V Gate threshold voltage VGS (th) 0.3 1.3 V VDS=10V / ID=1mA 130 180 m I =1.5A, V =4.5V D GS Static drain-source on-state RDS (on) 170 240 m ID=1.5A, VGS=2.5V resistance 220 310 m ID=0.8A, VGS=1.8V Forward transfer admittance Y 1.6 S V =10V, I =1.5A fs DS D Input capacitance pF Ciss 110 VDS=10V Output capacitance Coss 18 pF VGS=0V Reverse transfer capacitance C 15 pF f=1MHz rss Turn-on delay time ns td (on) 5 ID=1.0A VDD 10V Rise time tr 5 ns VGS=4.5V Turn-off delay time t 20 ns d (off) RL=10 Fall time ns tf 3 RG=10 Total gate charge Qg 1.8 2.5 nC VDD 10V Gate-source charge Q 0.3 nC V =4.5V gs GS Gate-drain charge nC Qgd0.3 ID=1.5A Pulsed <MOSFET>Body diode (source-drain) Forward voltage VSD 1.2 V IS=0.6A / VGS=0V <Di> 0.36 V I =0.1A F Forward voltage VF 0.47 V IF=0.5A Reverse current IR 100 AVR=20V 20190527-Rev. 0022/4