X-On Electronics has gained recognition as a prominent supplier of QS6K21FRATR MOSFET across the USA, India, Europe, Australia, and various other global locations. QS6K21FRATR MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

QS6K21FRATR ROHM

QS6K21FRATR electronic component of ROHM
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See Product Specifications
Part No.QS6K21FRATR
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET, N-CH, AEC-Q101, 45V, 1A, TSMT-6
Datasheet: QS6K21FRATR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6629 ea
Line Total: USD 0.66

Availability - 6629
Ship by Mon. 22 Jul to Wed. 24 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6629
Ship by Mon. 22 Jul to Wed. 24 Jul
MOQ : 1
Multiples : 1
1 : USD 0.6629
10 : USD 0.5229
100 : USD 0.4057
500 : USD 0.3562
1000 : USD 0.3115
3000 : USD 0.2753
6000 : USD 0.2753
9000 : USD 0.2657
24000 : USD 0.2632

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
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We are delighted to provide the QS6K21FRATR from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS6K21FRATR and other electronic components in the MOSFET category and beyond.

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QS6K21FRA Datasheet 45V Nch+Nch Small Signal MOSFET llOutline SOT-457T V 45V DSS SC-95 R (Max.) 420m DS(on) TSMT6 I 1.0A D P 1.25W D llFeatures llInner circuit 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT6) 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking K21 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 45 V DSS Continuous drain current I 1.0 A D *1 I Pulsed drain current 2.0 A DP Gate - Source voltage V 12 V GSS *2 P 1.25 D Power dissipation (total) W *3 P 0.95 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20170223 - Rev.002 2017 ROHM Co., Ltd. All rights reserved. QS6K21FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 132 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 12V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T j referenced to 25 V = 4.5V, I = 1.0A - 300 420 GS D Static drain - source *4 R V = 4.0V, I = 1.0A - 310 435 m DS(on) GS D on - state resistance V = 2.5V, I = 1.0A - 415 585 GS D R Gate resistance f = 1MHz, open drain - 11 - G Forward Transfer *4 Y V = 10V, I = 1A 1.2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2/11 20170223 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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RHM
ROHM Semicon
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