QS6U24TR ROHM

QS6U24 Datasheet 4V Drive Pch+SBD MOSFET llOutline SOT-457T V -30V DSS SC-95 R (Max.) 400m DS(on) TSMT6 I 1.0A D P 1.25W D llInner circuit llFeatures 1) The QS6U24 combines Pch MOSFET with a Schottky barrier diode in a single TSMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (4V drive). 4) Built-in Low V schottky barrier diode. F 5) Pb-free lead plating RoHS compliant. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type switching Quantity (pcs) 3000 Taping code TR Marking U24 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a <MOSFET> Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS V Gate - Source voltage 20 V GSS Continuous drain current I 1.0 A D *1 I Pulsed drain current 2.0 A DP Continuous source current (body diode) I -0.3 A S *1 I Pulsed source current (body diode) -1.2 A SP *3 P Power dissipation 0.9 W/element D Junction temperature T 150 j www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.002 QS6U24 Datasheet llAbsolute maximum ratings (T = 25C) a <Di> Parameter Symbol Value Unit V Repetitive peak reverse voltage 25 V RM V Reverse voltage 20 V R I Forward current 0.7 A F *2 I Forward current surge peak 3.0 A FSM *3 P Power dissipation 0.7 W/element D T Junction temperature 150 j <MOSFET + Di> Parameter Symbol Value Unit *3 P Power dissipation 1.25 W/total D T Operating junction and storage temperature range -55 to +150 stg llElectrical characteristics (T = 25C) a <MOSFET> Values Parameter Symbol Conditions Unit Min. Typ. Max. I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current V V = -10V, I = -1mA Gate threshold voltage -1.0 - -2.5 V GS(th) DS D V = -10V, I = -1A - 300 400 GS D Static drain - source *4 R V = -4.5V, I = -0.5A - 500 700 m DS(on) GS D on - state resistance V = -4V, I = -0.5A - 600 800 GS D Forward Transfer *4 Y V = -10V, I = -0.5A 0.5 - - S fs DS D Admittance www.rohm.com 2/10 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.