X-On Electronics has gained recognition as a prominent supplier of QS8J4TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS8J4TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QS8J4TR ROHM

QS8J4TR electronic component of ROHM
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See Product Specifications
Part No.QS8J4TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET TRANS MOSFET PCH 30V 4A 8PIN
Datasheet: QS8J4TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.981 ea
Line Total: USD 0.98 
Availability - 2859
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
68
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0935
10 : USD 0.9456
30 : USD 0.8531
100 : USD 0.7586
500 : USD 0.7156
1000 : USD 0.6975

2859
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.981
10 : USD 0.8625
100 : USD 0.6245
500 : USD 0.5233
1000 : USD 0.4899
3000 : USD 0.4577

1426
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 139
Multiples : 1
139 : USD 0.6112
250 : USD 0.5655

2861
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 139
Multiples : 1
139 : USD 0.7448
250 : USD 0.7149
500 : USD 0.6891
1000 : USD 0.6667
2500 : USD 0.647

1416
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 45
Multiples : 1
45 : USD 0.8867
51 : USD 0.7797
100 : USD 0.6883
200 : USD 0.6583
500 : USD 0.5844
1000 : USD 0.5781

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Operating Temperature Classification
Operating Temp Range
Polarity
Continuous Drain Current
Mounting
Gate-Source Voltage Max
Number Of Elements
Package Type
Rad Hardened
Drain-Source On-Volt
Type
Pin Count
Power Dissipation
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the QS8J4TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS8J4TR and other electronic components in the MOSFETs category and beyond.

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QS8J4 Datasheet -30V Pch + Pch Small Signal MOSFET llOutline V -30V DSS R (Max.) 56m DS(on) TSMT8 I 4A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT8) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J04 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 4 A D *1 I Pulsed drain current 16 A DP Gate - Source voltage V 20 V GSS *2 P 1.5 D Power dissipation (total) W *3 P 1.1 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20180921 - Rev.003 2018 ROHM Co., Ltd. All rights reserved. QS8J4 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 83.3 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 113 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 20V, V = 0V - - 10 A GSS GS DS leakage current Gate threshold V V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T j referenced to 25 V = -10V, I = -4A - 40 56 GS D Static drain - source *4 R V = -4.5V, I = -2A - 55 77 m DS(on) GS D on - state resistance V = -4.0V, I = -2A - 60 84 GS D R Gate resistance f = 1MHz, open drain - 19 - G Forward Transfer *4 Y V = -10V, I = -4A 3 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 2/11 20180921 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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