CPC3982 N-Channel Depletion-Mode INTEGRATED CIRCUITS DIVISION Vertical DMOS FET PRELIMINARY V / R I (min) Package Description (BR)DSX DS(on) DSS V (max) The CPC3982 is an N-channel, depletion mode, field (BR)DGX effect transistor (FET) that utilizes IXYS Integrated 800V 380 20mA SOT-23 Circuits proprietary third-generation vertical DMOS process. The third-generation process realizes Features world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical High Breakdown Voltage: 800V DMOS process yields a robust device, with high Low V Voltage: -1.4V to -3.1V GS(off) input impedance, for use in high-power applications. Depletion Mode Device Offers Low R DS(on) The CPC3982 is a highly reliable device that has at Cold Temperatures been used extensively in our Solid State Relays for High Input Impedance industrial and telecommunications applications. Small Package Size: SOT-23 Flammability Rating UL 94 V-0 This device excels in power applications that require low drain-source resistance, particularly in cold Applications environments such as automotive ignition modules. Constant Current Regulator The CPC3982 has a minimum breakdown voltage of Ignition Modules 800V, and is available in an SOT-23 package. As with Normally-On Switches all MOS devices, the FET structure prevents thermal Solid State Relays runaway and thermal-induced secondary breakdown. Converters Telecommunications Power Supply Ordering Information Part Description CPC3982TTR N-Channel Depletion Mode FET, SOT-23 Pkg. Tape and Reel (3000/Reel) Package Pinout Circuit Symbol D D 3 G 1 2 S G S (SOT-23) DS-CPC3982-R00E 1 PRELIMINARYINTEGRATED CIRCUITS DIVISION CPC3982 PRELIMINARY Absolute Maximum Ratings 25C (Unless Otherwise Noted) Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to Drain-to-Source Voltage 800 V the device. Functional operation of the device at conditions Gate-to-Source Voltage 15 V beyond those indicated in the operational sections of this Pulsed Drain Current 150 mA data sheet is not implied. 1 Total Package Dissipation 0.4 W Junction Temperature 125 C Typical values are characteristic of the device at +25C, and are the result of engineering evaluations. They are Operational Temperature -55 to +110 C provided for information purposes only, and are not part of Storage Temperature -55 to +125 C the manufacturing testing requirements. 1 Mounted on 1 x1 2 oz. Copper FR4 board. Electrical Characteristics 25C (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage BV V = -5.5V, I =100A 800 - - V DSX GS D Gate-to-Source Off Voltage V V = 15V, I =1A -1.4 - -3.1 V GS(off) DS D Change in V with Temperature dV /dT V = 15V, I =1A - - 4.5 mV/C GS(off) GS(off) DS D Gate Body Leakage Current I V =15V, V =0V - - 100 nA GSS GS DS Drain-to-Source Leakage Current I V = -5.5V, V =800V - - 1 A D(off) GS DS Saturated Drain-to-Source Current I V = 0V, V =15V 20 - - mA DSS GS DS Static Drain-to-Source On-State Resistance R - - 380 DS(on) V = 0V, I =20mA, V =10V GS D DS Change in R with Temperature dR /dT - - 2.5 %/C DS(on) DS(on) Forward Transconductance G I = 10mA, V = 10V 15 - - m FS D DS Input Capacitance C V = -3.5V 20 ISS GS Common Source Output Capacitance C 2.2 V = 25V - -pF OSS DS Reverse Transfer Capacitance C 1.3 f= 1MHz RSS Source-Drain Diode Voltage Drop V V = -5V, I =5mA - 0.6 1 V SD GS SD Thermal Resistance, Junction to Ambient - - 250 - C/W JA 2 R00E PRELIMINARY