X-On Electronics has gained recognition as a prominent supplier of CPC3982TTR MOSFET across the USA, India, Europe, Australia, and various other global locations. CPC3982TTR MOSFET are a product manufactured by IXYS. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

CPC3982TTR IXYS

CPC3982TTR electronic component of IXYS
Images are for reference only
See Product Specifications
Part No.CPC3982TTR
Manufacturer: IXYS
Category: MOSFET
Description: MOSFET N-Ch Depletion Mode Vertical DMOS FET
Datasheet: CPC3982TTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5831 ea
Line Total: USD 0.58

Availability - 277
Ship by Thu. 15 Aug to Mon. 19 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
277
Ship by Thu. 15 Aug to Mon. 19 Aug
MOQ : 1
Multiples : 1
1 : USD 0.5831
10 : USD 0.5163
100 : USD 0.3599
500 : USD 0.3093
1000 : USD 0.2703
3000 : USD 0.2495
6000 : USD 0.2392
9000 : USD 0.2392
24000 : USD 0.2311

33
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 3
Multiples : 1
3 : USD 0.4901
25 : USD 0.4264
49 : USD 0.3393
133 : USD 0.3211
3000 : USD 0.3172

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the CPC3982TTR from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPC3982TTR and other electronic components in the MOSFET category and beyond.

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CPC3982 N-Channel Depletion-Mode INTEGRATED CIRCUITS DIVISION Vertical DMOS FET PRELIMINARY V / R I (min) Package Description (BR)DSX DS(on) DSS V (max) The CPC3982 is an N-channel, depletion mode, field (BR)DGX effect transistor (FET) that utilizes IXYS Integrated 800V 380 20mA SOT-23 Circuits proprietary third-generation vertical DMOS process. The third-generation process realizes Features world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical High Breakdown Voltage: 800V DMOS process yields a robust device, with high Low V Voltage: -1.4V to -3.1V GS(off) input impedance, for use in high-power applications. Depletion Mode Device Offers Low R DS(on) The CPC3982 is a highly reliable device that has at Cold Temperatures been used extensively in our Solid State Relays for High Input Impedance industrial and telecommunications applications. Small Package Size: SOT-23 Flammability Rating UL 94 V-0 This device excels in power applications that require low drain-source resistance, particularly in cold Applications environments such as automotive ignition modules. Constant Current Regulator The CPC3982 has a minimum breakdown voltage of Ignition Modules 800V, and is available in an SOT-23 package. As with Normally-On Switches all MOS devices, the FET structure prevents thermal Solid State Relays runaway and thermal-induced secondary breakdown. Converters Telecommunications Power Supply Ordering Information Part Description CPC3982TTR N-Channel Depletion Mode FET, SOT-23 Pkg. Tape and Reel (3000/Reel) Package Pinout Circuit Symbol D D 3 G 1 2 S G S (SOT-23) DS-CPC3982-R00E 1 PRELIMINARYINTEGRATED CIRCUITS DIVISION CPC3982 PRELIMINARY Absolute Maximum Ratings 25C (Unless Otherwise Noted) Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to Drain-to-Source Voltage 800 V the device. Functional operation of the device at conditions Gate-to-Source Voltage 15 V beyond those indicated in the operational sections of this Pulsed Drain Current 150 mA data sheet is not implied. 1 Total Package Dissipation 0.4 W Junction Temperature 125 C Typical values are characteristic of the device at +25C, and are the result of engineering evaluations. They are Operational Temperature -55 to +110 C provided for information purposes only, and are not part of Storage Temperature -55 to +125 C the manufacturing testing requirements. 1 Mounted on 1 x1 2 oz. Copper FR4 board. Electrical Characteristics 25C (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage BV V = -5.5V, I =100A 800 - - V DSX GS D Gate-to-Source Off Voltage V V = 15V, I =1A -1.4 - -3.1 V GS(off) DS D Change in V with Temperature dV /dT V = 15V, I =1A - - 4.5 mV/C GS(off) GS(off) DS D Gate Body Leakage Current I V =15V, V =0V - - 100 nA GSS GS DS Drain-to-Source Leakage Current I V = -5.5V, V =800V - - 1 A D(off) GS DS Saturated Drain-to-Source Current I V = 0V, V =15V 20 - - mA DSS GS DS Static Drain-to-Source On-State Resistance R - - 380 DS(on) V = 0V, I =20mA, V =10V GS D DS Change in R with Temperature dR /dT - - 2.5 %/C DS(on) DS(on) Forward Transconductance G I = 10mA, V = 10V 15 - - m FS D DS Input Capacitance C V = -3.5V 20 ISS GS Common Source Output Capacitance C 2.2 V = 25V - -pF OSS DS Reverse Transfer Capacitance C 1.3 f= 1MHz RSS Source-Drain Diode Voltage Drop V V = -5V, I =5mA - 0.6 1 V SD GS SD Thermal Resistance, Junction to Ambient - - 250 - C/W JA 2 R00E PRELIMINARY

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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