Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET/ TSMT8 (8) (7) (6) (5) PNP TRANSISTOR Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive). Abbreviated symbol : F02 Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TR Basic ordering unit (pieces) 3000 QS8F2 2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Emitter 1 (4) Tr2 Base (5) Tr2 Collector Absolute maximum ratings (Ta = 25 C) (6) Tr2 Collector (1) (2) (3) (4) <Tr1(Pch MOSFET)> (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain Parameter Symbol Limits Unit 2 BODY DIODE Drain-source voltage V 12 V DSS Gate-source voltage V 10 V GSS Continuous I 2.5 A D Drain current * Pulsed I 10 A DP Continuous I 1A Source current s * (Body Diode) Pulsed I 10 A sp * Pw10s, Duty cycle1% <Tr2(PNP Tr)> Parameter Symbol Limits Unit Collector-Emitter voltage V 30 V CEO Collector-Base voltage V 30 V CBO Emitter-Base voltage V 6V EBO Continuous I 2A C Collector current * Pulsed I 4A CP * Pw1ms, Pulsed <MOSFET and Di> Parameter Symbol Limits Unit 1.5 W / TOTAL * Power dissipation P D 1.25 W / ELEMENT Junction temperature Tj 150 C Range of storage temperature Tstg 55 to 150 C * Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.A 1/6 Not Recommended for New DesignsData Sheet QS8F2 Electrical characteristics (Ta = 25 C) <Tr1(Pch MOSFET)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 10V, V =0V GSS GS DS Drain-source breakdown voltage V 12 - - V I = 1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I - 1 AV = 12V, V =0V DSS DS GS Gate threshold voltage V 0.3 - 1.0 V V = 6V, I = 1mA GS (th) DS D -44 61 I = 2.5A, V = 4.5V D GS -60 84 I = 1.2A, V = 2.5V Static drain-source on-state D GS R * m DS (on) resistance - 81 121 I = 1.2A, V = 1.8V D GS - 110 220 I = 0.5A, V = 1.5V D GS * Forward transfer admittance l Y l 3.5 - - S V = 6V, I = 2.5A fs DS D Input capacitance C - 1350 - pF V = 6V iss DS Output capacitance C - 130 - pF V =0V oss GS Reverse transfer capacitance C - 125 - pF f=1MHz rss Turn-on delay time t -9 - nsI = 1.2A, V 6V ** d(on) D DD Rise time t - 35 - ns V = 4.5V r ** GS Turn-off delay time t - 130 - ns R =5 ** d(off) L Fall time t - 85 - ns R =10 ** f G Total gate charge Q ** - 13 - nC I = 2.5A, g D Gate-source charge Q - 2.5 - nC V 6V ** gs DD Gate-drain charge Q - 2.0 - nC V = 4.5V gd ** GS *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I = 2.5A, V =0V SD s GS *Pulsed <Tr2(PNP Tr)> Parameter Symbol Min. Typ. Max. Unit Conditions BV I = 1mA Collector-Emitter breakdown voltage 30 - - V CEO C BV I = 10A Collector-Base breakdown voltage CBO 30 - - V C BV I = 10A Emitter-Base breakdown voltage EBO 6- - V E I V = 30V Collector cut-off current CBO -- 100 nA CB I V = 6V Emitter cut-off current EBO -- 100 nA EB * V I = 1.5A , I = 75mA Collector-Emitter saturation voltage - 180 370 mV CE(sat) C B V = 2V,I = 200mA DC current gain FE 270 - 680 - CE C V = 2V,I =200mA, CE E f Transistor frequency - 280 - MHz T f=100MH V = 10V,I =0mA, CB E Collector output capacitance C -20 -pF ob f=1MHz *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A Not Recommended for New Designs
