CPC5602 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Rating Units Description Drain-to-Source Voltage - V 350 V The CPC5602 is an N-channel depletion mode Field DS Effect Transistor (FET) that utilizes IXYS Integrated Max On-Resistance - R 14 DS(on) Circuits Divisions proprietary third generation vertical Max Power 2.5 W DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical Features DMOS process yields a highly reliable device, 350V Drain-to-Source Voltage particularly in difficult application environments such Depletion Mode Device Offers Low R DS(on) as telecommunications, security, and power supplies. at Cold Temperatures Low On-resistance: 8 (Typical) 25C One of the primary applications for the CPC5602 is Low V Voltage: -2.0V to -3.6V as a linear regulator/hook switch for the LITELINK GS(off) High Input Impedance family of Data Access Arrangements (DAA) Devices Low Input and Output Leakage CPC5620A, CPC5621A, and CPC5622A. Small Package Size SOT-223 The CPC5602 has a typical on-resistance of 8, a PC Card (PCMCIA) Compatible drain-to-source voltage of 350V, and is available in an PCB Space and Cost Savings SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Applications Support Component for LITELINK Data Access Arrangement (DAA) Ordering Information Telecommunications Part Description Normally On Switches CPC5602CTR N-Channel Depletion Mode FET, SOT-223 Pkg. Ignition Modules Tape and Reel (1000/Reel) Converters Security Power Supplies Package Pinout D 4 1 23 G D S Pin Number Name 1GATE 2 DRAIN 3 SOURCE 4 DRAIN DS-CPC5602-R10 1 www.ixysic.comCPC5602 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Symbol Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage V 350 V DS device. Functional operation of the device at conditions beyond Gate-to-Source Voltage V 20 V GS those indicated in the operational sections of this data sheet is Total Package Dissipation P 2.5 W o not implied. Operational Temperature T -40 to +85 C A o Storage Temperature T -40 to +125 C A o Electrical Characteristics 25 C (Unless Otherwise Specified) Parameter Symbol Conditions Min Typ Max Units Gate-to-Source Off Voltage V I = 2A, V =10V, V =100V -2 -2.62 -3.6 V GS(off) D DS DS V = -5V, V =190V - - 20 nA GS DS Drain-to-Source Leakage Current I DS(off) V = -5V, V =350V - - 1 A GS DS Drain Current V = -2.7V, V =5V, V =50V - - 5 mA GS DS DS I D V = -0.57V, V =5V 130 - - mA GS DS On-Resistance R V = -0.35V, I =50mA - 8 14 DS(on) GS DS Gate Leakage Current I V =10V, V =-10V - - 0.1 A GSS GS GS Gate Capacitance C V = V =0V - - 300 pF ISS DS GS Thermal Characteristics Parameter Symbol Conditions Min Typ Max Units Thermal Resistance R - - - 14 C/W JC 2 R10 www.ixysic.com