X-On Electronics has gained recognition as a prominent supplier of QS5W1TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. QS5W1TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

QS5W1TR ROHM

QS5W1TR electronic component of ROHM
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See Product Specifications
Part No.QS5W1TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Isolated AC/DC Converter
Datasheet: QS5W1TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8547 ea
Line Total: USD 0.85 
Availability - 1358
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1358
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8547
10 : USD 0.6204
100 : USD 0.4213
500 : USD 0.3421
1000 : USD 0.3102
3000 : USD 0.2728
6000 : USD 0.264
9000 : USD 0.253
24000 : USD 0.2519

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QS5W1TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS5W1TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Data Sheet Midium Power Transistors (30V / 3A) QS5W1 Structure Dimensions (Unit : mm) NPN Silicon epitaxial planar transistor TSMT5 Features 1) Low saturation voltage V = 0.4V (Max.) (I / I = 1A / 50mA) CE (sat) C B 2) High speed switching (1) Tr.1 Base (2) Emitter (3) Tr.2 Base Applications (4) Tr.2 Collector Abbreviated symbol : W01 (5) Tr.1 Collector Low Frequency Amplifier Driver Packaging specifications Inner circuit (Unit : mm) Package TSMT5 (5) (4) Type Code TR Quantity (pcs) 3000 Tr.1 Tr.2 (1) Tr.1 Base (2) Emitter Absolute maximum ratings (Ta = 25 C) (3) Tr.2 Base (1) (2) (3) (4) Tr.2 Collector <It is the same ratings for the Tr.1 and Tr.2> (5) Tr.1 Collector Parameter Symbol Limits Unit Collector-base voltage V 30 V CBO Collector-emitter voltage V 30 V CEO Emitter-base voltage V 6V EBO DC I 3A C Collector current *1 Pulsed I 6A CP *2 P 0.5 W/Total D *3 Power dissipation P 1.25 W/Total D *3 P 0.9 W/Element D Junction temperature T 150 C j Range of storage temperature T -55 to 150 C stg *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 25 x 25 x 0.8 mm ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 1/5QS5W1 Data Sheet Electrical characteristics (Ta=25C) <It is the same ratings for the Tr.1 and Tr.2> Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BV 30 - - V I = 1mA CEO C BV 30 - - V I = 100A Collector-base breakdown voltage CBO C Emitter-base breakdown voltage BV 6- - V I = 100A EBO E Collector cut-off current I -- 1 A V = 30V CBO CB Emitter cut-off current I -- 1 V = 4V A EBO EB *1 Collector-emitter staturation voltage V - 200 400 mV I = 1A, I = 50mA CE(sat) C B h V = 2V, I = 500mA DC current gain 200 - 500 - FE CE C *1 V = 10V CE Transition frequency f - 270 - MHz T I =-100mA, f=100MHz E V = 10V, I =0A CB E C Collector output capacitance -16 - pF ob f=1MHz Turn-on time t -25 - ns on *2 I = 1.5A, I = 150mA, C B1 t Storage time *2 - 300 - ns stg I =-150mA, V ~ 12V B2 CC Fall time t *2 -20 - ns f *1 Pulsed *2 See switching time test circuit www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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