QS5U36TR ROHM

QS5U36 Datasheet 1.5V Drive Nch+SBD MOSFET llOutline SOT-25T V 20V DSS R (Max.) 81m DS(on) TSMT5 I 2.5A D P 1.25W D llInner circuit llFeatures 1) The QS5U36 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low V schottky barrier diode. F 5) Pb-free lead plating RoHS compliant. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Taping code TR Marking U36 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a <MOSFET> Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS V Gate - Source voltage 10 V GSS Continuous drain current I 2.5 A D *1 I Pulsed drain current 5.0 A DP Continuous source current (body diode) I 0.7 A S *1 I Pulsed source current (body diode) 5.0 A SP *3 P Power dissipation 0.9 W/element D Junction temperature T 150 j www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.002 QS5U36 Datasheet llAbsolute maximum ratings (T = 25C) a <Di> Parameter Symbol Value Unit V Repetitive peak reverse voltage 25 V RM V Reverse voltage 20 V R I Forward current 0.7 A F *2 I Forward current surge peak 3.0 A FSM *3 P Power dissipation 0.7 W/element D T Junction temperature 150 j <MOSFET + Di> Parameter Symbol Value Unit *3 P Power dissipation 1.25 W/total D T Operating junction and storage temperature range -55 to +150 stg llElectrical characteristics (T = 25C) a <MOSFET> Values Parameter Symbol Conditions Unit Min. Typ. Max. I Gate - Source leakage current V = 10V, V = 0V - - 10 A GSS GS DS Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.3 V GS(th) DS D V = 4.5V, I = 2.5A - 58 81 GS D V = 2.5V, I = 2.5A - 74 104 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 1.3A - 95 133 GS D V = 1.5V, I = 0.5A - 120 240 GS D Forward Transfer *4 Y V = 10V, I = 2.5A 2.7 - - S fs DS D Admittance www.rohm.com 2/10 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.