X-On Electronics has gained recognition as a prominent supplier of QS6J1TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS6J1TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QS6J1TR ROHM

QS6J1TR electronic component of ROHM
QS6J1TR ROHM
QS6J1TR MOSFETs
QS6J1TR  Semiconductors

Images are for reference only
See Product Specifications
Part No. QS6J1TR
Manufacturer: ROHM
Category: MOSFETs
Description: Mosfet Array 2 P-Channel (Dual) 20V 1.5A 1.25W Surface Mount TSMT6 (SC-95)
Datasheet: QS6J1TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7288 ea
Line Total: USD 0.73 
Availability - 5794
Ship by Tue. 04 Feb to Thu. 06 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5794
Ship by Tue. 04 Feb to Thu. 06 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7288
10 : USD 0.6025
100 : USD 0.3652
500 : USD 0.3025
1000 : USD 0.2684
3000 : USD 0.2497
6000 : USD 0.2299
9000 : USD 0.22

420
Ship by Thu. 06 Feb to Wed. 12 Feb
MOQ : 191
Multiples : 1
191 : USD 0.7275

485
Ship by Thu. 06 Feb to Wed. 12 Feb
MOQ : 60
Multiples : 1
60 : USD 1.0757
73 : USD 0.8905
109 : USD 0.598
200 : USD 0.5948
500 : USD 0.481

5820
Ship by Thu. 06 Feb to Wed. 12 Feb
MOQ : 191
Multiples : 1
191 : USD 0.5561
250 : USD 0.5339
500 : USD 0.5147
1000 : USD 0.4786
2500 : USD 0.4645
5000 : USD 0.452

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the QS6J1TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS6J1TR and other electronic components in the MOSFETs category and beyond.

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QS6J1 Datasheet -20V Pch+Pch Small Signal MOSFET llOutline SOT-457T V -20V DSS SC-95 R (Max.) 215m DS(on) TSMT6 I 1.5A D P 1.25W D llFeatures llInner circuit 1) Low on-resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS Continuous drain current I 1.5 A D *1 I Pulsed drain current 6 A DP Gate - Source voltage V 12 V GSS *2 P 1.25 D Power dissipation (total) W *3 P 0.95 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20181106 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. QS6J1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 132 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -18.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 12V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -1mA -0.7 - -2.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.3 - mV/ temperature coefficient T j referenced to 25 V = -4.5V, I = -1.5A - 155 215 GS D Static drain - source *4 R V = -4.0V, I = -1.5A - 170 235 m DS(on) GS D on - state resistance V = -2.5V, I = -0.75A - 310 430 GS D Forward Transfer *4 Y V = -10V, I = -0.75A 1.0 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 2/11 20181106 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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