X-On Electronics has gained recognition as a prominent supplier of QS6J3TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS6J3TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QS6J3TR ROHM

Name: QS6J3TR
Brand: ROHM
SKU: QS6J3TR_ROHM
Availability: InStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	QS6J3TR
Manufacturer:	ROHM
Category:	MOSFETs
Description:	MOSFET 2P-CH 20V 1.5A
Datasheet:	QS6J3TR Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.6437 ea
Line Total: USD 0.64

Availability - 958
Ship by Wed. 05 Feb to Fri. 07 Feb

MOQ: 1 Multiples: 1
Pack Size: 1

QS6J3TR More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

958

Ship by Wed. 05 Feb to Fri. 07 Feb

MOQ : 1
Multiples : 1

1 : USD 0.6437
10 : USD 0.5625
100 : USD 0.3465
3000 : USD 0.2937
24000 : USD 0.2926

Specifications

Manufacturer

ROHM ROHM

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

1.5 A 1.5 A

Vds - Drain-Source Breakdown Voltage

20 V 20 V

Rds On - Drain-Source Resistance

215 mOhms 215 mOhms

Transistor Polarity

P - Channel P - Channel

Pd - Power Dissipation

1.25 W 1.25 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

T SMT - 5 T SMT - 5

Packaging

Reel Reel

Technology

Si Si

Number of Channels

2 Channel 2 Channel

Vgs - Gate-Source Voltage

12 V 12 V

Channel Mode

Enhancement Enhancement

Configuration

Dual Dual

Brand

Rohm Semiconductor Rohm Semiconductor

Continuous Drain Current

- 1.5 A - 1.5 A

Drain-Source Breakdown Voltage

- 20 V - 20 V

Gate-Source Breakdown Voltage

+/- 12 V +/- 12 V

Power Dissipation

1.25 W 1.25 W

Rds On

215 Mohms At 4.5 V 215 Mohms At 4.5 V

Fall Time

12 ns 12 ns

Rise Time

12 ns 12 ns

Factory Pack Quantity :

3000 3000

Typical Turn-Off Delay Time

45 ns 45 ns

Height

0.85 mm 0.85 mm

Length

2.9 mm 2.9 mm

Series

Qs6j3 Qs6j3

Transistor Type

2 P - Channel 2 P - Channel

Width

1.6 mm 1.6 mm

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-On Delay Time

10 ns 10 ns

Notes:- Show Stocked Products With Similar Attributes.

QS6J3TR Alternative Parts

We are delighted to provide the QS6J3TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS6J3TR and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

QS6J3 Transistors 2.5V Drive Pch+Pch MOS FET QS6J3 z Structure z External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 z Features (6) (5) (4) 1) Two Pch MOS FET transistors in a single 0~0.1 TSMT6 package. (1) (2) (3) 2) Low on-state resistance with a fast switching. 1pin mark 0.16 0.4 3) Low voltage drive (2.5V). Each lead has same dimensions Abbreviated symbol : J03 z Applications z Inner circuit Switching (6) (5) (4) 1 z Packaging specifications 2 2 Package Taping TR Type Code Basic ordering unit (pieces) 3000 (1) Tr1 Source (2) Tr1 Gate QS6J3 1 (3) Tr2 Drain (1) (2) (3) (4) Tr2 Source (5) Tr2 Gate 1 ESD PROTECTION DIODE (6) Tr1 Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) <It is the same ratings for Tr1 and Tr2 > Parameter Symbol Limits Unit Drain-source voltage V 20 V DSS Gate-source voltage VGSS 12 V Continuous ID 1.5 A Drain current 1 Pulsed IDP 6.0 A 1 Source current Continuous I 0.75 A S (Body diode) Pulsed ISP 6.0 A 2 1.25 W / TOTAL Total power dissipation P D 0.9 W / ELEMENT Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit 100 C / W / TOTAL Channel to ambient Rth (ch-a) 139 C / W / ELEMENT Mounted on a ceramic board Rev.A 1/4 1.6 2.8 0.3~0.6QS6J3 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for Tr1 and Tr2. MOS FET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V 20 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 20V, VGS=0V Gate threshold voltage VGS (th) 0.7 2.0 V VDS= 10V, ID= 1mA 155 215 m ID= 1.5A, VGS= 4.5V Static drain-source on-state R 170 235 m I = 1.5A, V = 4V DS (on) D GS resistance 310 430 m ID= 0.75A, VGS= 2.5V Forward transfer admittance Yfs 1.0 SVDS= 10V, ID= 0.75A Input capacitance Ciss 270 pF VDS= 10V Output capacitance C 40 pF V =0V oss GS Reverse transfer capacitance Crss 35 pF f=1MHz Turn-on delay time td (on) 10 ns ID= 0.75A VDD 15V Rise time tr 12 ns VGS= 4.5V Turn-off delay time t 45 ns d (off) RL=20 Fall time tf 20 ns RG=10 Total gate charge Qg 3.0 nC VDD 15V RL=10 Gate-source charge Qgs 0.8 nC VGS= 4.5V RG=10 Gate-drain charge Q 0.85 nC I = 1.5A gd D Pulsed <Body diode (Source-drain)> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.75A, VGS=0V Rev.A 2/4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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Availability	Price	Buy Price	Quantity
958 Ship by Wed. 05 Feb to Fri. 07 Feb MOQ : 1 Multiples : 1	1 : USD 0.6437 10 : USD 0.5625 100 : USD 0.3465 3000 : USD 0.2937 24000 : USD 0.2926

Image	Part-Description
Hot	QS6K21TR Mosfet Array 2 N-Channel (Dual) 45V 1A 1.25W Surface Mount TSMT6 (SC-95) Stock : 2140 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Hot	QS6M3TR MOSFET N+P 30 20V 1.5A TSMT6 Stock : 425 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Hot	QS6K1TR Mosfet Array 2 N-Channel (Dual) 30V 1A 1.25W Surface Mount TSMT6 (SC-95) Stock : 1905 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Hot	QS6M4TR Mosfet Array N and P-Channel 30V, 20V 1.5A 1.25W Surface Mount TSMT6 (SC-95) Stock : 2095 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Hot	QS6U24TR P-Channel 30 V 1A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95) Stock : 4501 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Hot	QS6Z5TR Trans GP BJT NPN/PNP 50V 1A 6-Pin TSMT T/R Stock : 3222 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Hot	QS8F2TCR ROHM Semiconductor MOSFET Complex Trans BIP PNP MOS Pch Stock : 0 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Hot	QS8J13TR ROHM Semiconductor MOSFET Stock : 3000 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Hot	QS6K21FRATR MOSFET, N-CH, AEC-Q101, 45V, 1A, TSMT-6 Stock : 5151 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Hot	QS6K1FRATR Mosfet Array 2 N-Channel (Dual) 30V 1A (Ta) 900mW (Tc) Surface Mount TSMT6 (SC-95) Stock : 14671 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.