QS6J3 Transistors 2.5V Drive Pch+Pch MOS FET QS6J3 z Structure z External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 z Features (6) (5) (4) 1) Two Pch MOS FET transistors in a single 0~0.1 TSMT6 package. (1) (2) (3) 2) Low on-state resistance with a fast switching. 1pin mark 0.16 0.4 3) Low voltage drive (2.5V). Each lead has same dimensions Abbreviated symbol : J03 z Applications z Inner circuit Switching (6) (5) (4) 1 z Packaging specifications 2 2 Package Taping TR Type Code Basic ordering unit (pieces) 3000 (1) Tr1 Source (2) Tr1 Gate QS6J3 1 (3) Tr2 Drain (1) (2) (3) (4) Tr2 Source (5) Tr2 Gate 1 ESD PROTECTION DIODE (6) Tr1 Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) <It is the same ratings for Tr1 and Tr2 > Parameter Symbol Limits Unit Drain-source voltage V 20 V DSS Gate-source voltage VGSS 12 V Continuous ID 1.5 A Drain current 1 Pulsed IDP 6.0 A 1 Source current Continuous I 0.75 A S (Body diode) Pulsed ISP 6.0 A 2 1.25 W / TOTAL Total power dissipation P D 0.9 W / ELEMENT Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit 100 C / W / TOTAL Channel to ambient Rth (ch-a) 139 C / W / ELEMENT Mounted on a ceramic board Rev.A 1/4 1.6 2.8 0.3~0.6QS6J3 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for Tr1 and Tr2. MOS FET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V 20 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 20V, VGS=0V Gate threshold voltage VGS (th) 0.7 2.0 V VDS= 10V, ID= 1mA 155 215 m ID= 1.5A, VGS= 4.5V Static drain-source on-state R 170 235 m I = 1.5A, V = 4V DS (on) D GS resistance 310 430 m ID= 0.75A, VGS= 2.5V Forward transfer admittance Yfs 1.0 SVDS= 10V, ID= 0.75A Input capacitance Ciss 270 pF VDS= 10V Output capacitance C 40 pF V =0V oss GS Reverse transfer capacitance Crss 35 pF f=1MHz Turn-on delay time td (on) 10 ns ID= 0.75A VDD 15V Rise time tr 12 ns VGS= 4.5V Turn-off delay time t 45 ns d (off) RL=20 Fall time tf 20 ns RG=10 Total gate charge Qg 3.0 nC VDD 15V RL=10 Gate-source charge Qgs 0.8 nC VGS= 4.5V RG=10 Gate-drain charge Q 0.85 nC I = 1.5A gd D Pulsed <Body diode (Source-drain)> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.75A, VGS=0V Rev.A 2/4