X-On Electronics has gained recognition as a prominent supplier of QS5W2TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. QS5W2TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

QS5W2TR ROHM

QS5W2TR electronic component of ROHM
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See Product Specifications
Part No.QS5W2TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Isolated DC/DC Converter
Datasheet: QS5W2TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2249 ea
Line Total: USD 1.12 
Availability - 2343
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2343
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2249
50 : USD 0.1982
150 : USD 0.1869
500 : USD 0.1726
3000 : USD 0.1387
6000 : USD 0.1349

10042
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5577
10 : USD 0.451
100 : USD 0.3432
500 : USD 0.2761
1000 : USD 0.2541
3000 : USD 0.2167

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 348
Multiples : 1
348 : USD 0.5173

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 348
Multiples : 1
348 : USD 0.4421

2774
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 46
Multiples : 1
46 : USD 0.884
74 : USD 0.5509
114 : USD 0.3592
261 : USD 0.156
500 : USD 0.1447
1000 : USD 0.1401
2000 : USD 0.1392

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QS5W2TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS5W2TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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QS5W2 Datasheet Middle Power Transistor (50V / 3A) llOutline Parameter Tr1 and Tr2 SOT-25T V 50V CEO I 3A C TSMT5 llFeatures llInner circuit 1)Low saturation voltage, typically V =350mV (Max.) ( I /I =1A/50mA) CE(sat) C B 2)High speed switching llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-25T QS5W2 2928 TR 180 8 3000 W02 (TSMT5) www.rohm.com 1/6 20151118 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. QS5W2 Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 6 V EBO I 3 A C Collector current *1 I 6 A CP *2 P 0.5 W/Total D Power dissipation *3*4 P 1.25 W/Total D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = 100A 50 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 6 - - V EBO E I Collector cut-off current V = 50V - - 1.0 A CBO CB I V = 4V Emitter cut-off current - - 1.0 A EBO EB *5 Collector-emitter saturation voltage V I = 1A, I = 50mA - 130 350 mV CE(sat) C B h V = 3V, I = 50mA DC current gain 180 - 450 - FE CE C V = 10V,I = -500mA CE E *5 f Transition frequency - 320 - MHz T f = 100MHz V = 10V,I = 0A CB E Output capacitance C - 13 - pF ob f = 1MHz t Turn-On time - 50 - ns on I = 1.5A,V 10V C CC t I = 0.15A Storage time - 450 - ns stg B1 I = -0.15A B2 Fall time t - 80 - ns f (See test circuit) *1 Pw=10ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board( 25250.8mm). *4 900mW per element must not be exceeded. *5 Pulsed www.rohm.com 2/6 20151118 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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