CPC5603 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Rating Units Description Drain-to-Source Voltage - V 415 V DS The CPC5603 is an N-channel, depletion mode Field Max On-Resistance - R 14 Effect Transistor (FET) that utilizes IXYS Integrated DS(on) Circuits Divisions proprietary third-generation vertical Max Power 2.5 W DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS Features process yields a highly reliable device particularly 415V Drain-to-Source Voltage in difficult application environments such as Depletion Mode Device Offers Low R telecommunications, security, and power supplies. DS(on) at Cold Temperatures One of the primary applications for the CPC5603 is Low On-Resistance: 8 (Typical) 25C as a linear regulator/hook switch for the LITELINK Low V Voltage: -2.0V to -3.6V GS(off) family of Data Access Arrangements (DAA) Devices High Input Impedance CPC5620A, CPC5621A, and CPC5622A. Low Input and Output Leakage The CPC5603 has a typical on-resistance of 8, a Small Package Size SOT-223 drain-to-source voltage of 415V and is available in PC Card (PCMCIA) Compatible the SOT-223 package. As with all MOS devices, the PCB Space and Cost Savings FET structure prevents thermal runaway and thermal-induced secondary breakdown. Applications Support Component for LITELINK Ordering Information Data Access Arrangement (DAA) Part Description Telecom CPC5603C N-Channel Depletion Mode FET, SOT-223 Pkg. Normally-On Switches Cut-Tape, Available in Quantities of 200, 400, Ignition Modules 600, and 800 Only (see Note 1) Converters CPC5603CTR N-Channel Depletion Mode FET, SOT-223 Pkg. Tape and Reel (1000/Reel) Security Note 1: Orders for 1000 or greater must be for theCT part option Power Supplies and in increments of 1000. Package Pinout D 4 1 2 3 G D S Pin Number Name 1GATE 2 DRAIN 3 SOURCE 4 DRAIN Pb e3 DS-CPC5603-R07 1 www.ixysic.comCPC5603 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage (V ) 415 V DS device. Functional operation of the device at conditions beyond Gate-to-Source Voltage (V ) 20 V GS those indicated in the operational sections of this data sheet is Total Package Dissipation 2.5 W o not implied. Operational Temperature -40 to +85 C o Storage Temperature -40 to +125 C o Electrical Characteristics 25 C (Unless Otherwise Specified) Parameter Symbol Conditions Min Typ Max Units Gate-to-Source Off Voltage V I = 2A, V =10V, V =100V -3.6 -2.0 V GS(off) D DS DS V = -5V, V =250V - - 20 nA GS DS Drain-to-Source Leakage Current I DS(off) V = -5V, V =415V - - 1 A GS DS V = -2.7V, V =5V, V =50V - - 5 mA GS DS DS Drain Current I D V = -0.57V, V =5V 130 - - mA GS DS On Resistance R V = -0.35V, I =50mA - 8 14 DS(on) GS DS Gate Leakage Current I V =10V, V =-10V - - 0.1 A GSS GS GS Gate Capacitance C V = V =0V - - 300 pF ISS DS GS Thermal Characteristics Parameter Symbol Conditions Min Typ Max Units Thermal Resistance R ---14 C/W JC R07 2 www.ixysic.com