X-On Electronics has gained recognition as a prominent supplier of QH8MA3TCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QH8MA3TCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QH8MA3TCR ROHM

QH8MA3TCR electronic component of ROHM
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See Product Specifications
Part No.QH8MA3TCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 30V N+P Ch MOSFET
Datasheet: QH8MA3TCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
43: USD 0.962 ea
Line Total: USD 41.37 
Availability - 97
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 43  Multiples: 1
Pack Size: 1
Availability Price Quantity
97
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7212
10 : USD 0.6112
30 : USD 0.5515
100 : USD 0.4833
500 : USD 0.4525
1000 : USD 0.4394

2870
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 171
Multiples : 1
171 : USD 0.6221
250 : USD 0.5971
500 : USD 0.5755
1000 : USD 0.5567
2500 : USD 0.5403

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 171
Multiples : 1
171 : USD 0.6221
250 : USD 0.5971
500 : USD 0.5755
1000 : USD 0.5567
2500 : USD 0.5403

97
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 43
Multiples : 1
43 : USD 0.962
87 : USD 0.4695
100 : USD 0.429

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QH8MA3TCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QH8MA3TCR and other electronic components in the MOSFETs category and beyond.

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QH8MA3 Datasheet 30V Nch+Pch Middle Power MOSFET llOutline TSMT8 Symbol Tr1:Nch Tr2:Pch V 30V -30V DSS R (Max.) 29m 48m DS(on) I 7.0A 5.5A D P 2.5W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking MA3 llAbsolute maximum ratings (T = 25C) ,unless otherwise specified. a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 30 -30 V DSS *1 Continuous drain current I 7.0 5.5 A D *2 I Pulsed drain current 18 18 A D, pulse Gate - Source voltage V 20 20 V GSS *4 E Avalanche energy, single pulse 1.8 1.1 mJ AS *4 I Avalanche current 5.0 -4.0 A AS *1 P 2.5 D total *3 P Power dissipation 1.5 W D *3 element P 1.25 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/19 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. QH8MA3 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - 83.3 - thJA llElectrical characteristics (T = 25C) , unless otherwise specified a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. V = 0V, I = 1mA Tr1 30 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -30 - - GS D V I = 1mA, referenced to 25 Tr1 - 21 - (BR)DSS D Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 - -22 - D Tr1 V = 30V, V = 0V - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = -30V, V = 0V - - -1 DS GS Tr1 V = 0V, V = 20V - - 100 DS GS Gate - Source I nA GSS leakage current Tr2 V = 0V, V = 20V - - 100 DS GS V = V , I = 1mA Tr1 1.0 - 2.5 DS GS D Gate threshold V V GS(th) voltage V = V , I = -1mA Tr2 -1.0 - -2.5 DS GS D V I = 1mA, referenced to 25 Tr1 - -3 - GS(th) D Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 2.9 - j D V = 10V, I = 7.0A - 22 29 GS D Tr1 V = 4.5V, I = 5.0A - 35 46 GS D Static drain - source *5 R m DS(on) on - state resistance V = -10V, I = -5.5A - 37 48 GS D Tr2 V = -4.5V, I = -4.0A - 55 72 GS D Tr1 V = 5V, I = 5A 2.7 - - DS D *5 g Transconductance S fs V = -5V, I = -4A Tr2 3.3 - - DS D *1 Pw 1s, Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 MOUNTED ON A CERAMIC BOARD *4 Tr1: L 100H, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch Tr2: L 100H, V = -15V, R = 25, STARTING T = 25 Fig.6-1,6-2 DD G ch *5 Pulsed www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/19 20150730 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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