QH8MA3 Datasheet 30V Nch+Pch Middle Power MOSFET llOutline TSMT8 Symbol Tr1:Nch Tr2:Pch V 30V -30V DSS R (Max.) 29m 48m DS(on) I 7.0A 5.5A D P 2.5W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking MA3 llAbsolute maximum ratings (T = 25C) ,unless otherwise specified. a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 30 -30 V DSS *1 Continuous drain current I 7.0 5.5 A D *2 I Pulsed drain current 18 18 A D, pulse Gate - Source voltage V 20 20 V GSS *4 E Avalanche energy, single pulse 1.8 1.1 mJ AS *4 I Avalanche current 5.0 -4.0 A AS *1 P 2.5 D total *3 P Power dissipation 1.5 W D *3 element P 1.25 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/19 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. QH8MA3 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - 83.3 - thJA llElectrical characteristics (T = 25C) , unless otherwise specified a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. V = 0V, I = 1mA Tr1 30 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -30 - - GS D V I = 1mA, referenced to 25 Tr1 - 21 - (BR)DSS D Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 - -22 - D Tr1 V = 30V, V = 0V - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = -30V, V = 0V - - -1 DS GS Tr1 V = 0V, V = 20V - - 100 DS GS Gate - Source I nA GSS leakage current Tr2 V = 0V, V = 20V - - 100 DS GS V = V , I = 1mA Tr1 1.0 - 2.5 DS GS D Gate threshold V V GS(th) voltage V = V , I = -1mA Tr2 -1.0 - -2.5 DS GS D V I = 1mA, referenced to 25 Tr1 - -3 - GS(th) D Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 2.9 - j D V = 10V, I = 7.0A - 22 29 GS D Tr1 V = 4.5V, I = 5.0A - 35 46 GS D Static drain - source *5 R m DS(on) on - state resistance V = -10V, I = -5.5A - 37 48 GS D Tr2 V = -4.5V, I = -4.0A - 55 72 GS D Tr1 V = 5V, I = 5A 2.7 - - DS D *5 g Transconductance S fs V = -5V, I = -4A Tr2 3.3 - - DS D *1 Pw 1s, Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 MOUNTED ON A CERAMIC BOARD *4 Tr1: L 100H, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch Tr2: L 100H, V = -15V, R = 25, STARTING T = 25 Fig.6-1,6-2 DD G ch *5 Pulsed www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/19 20150730 - Rev.002