X-On Electronics has gained recognition as a prominent supplier of RQ3E080BNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3E080BNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3E080BNTB ROHM

RQ3E080BNTB electronic component of ROHM
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See Product Specifications
Part No.RQ3E080BNTB
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RQ3E080BNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4466 ea
Line Total: USD 0.45 
Availability - 11077
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 0.2386
10 : USD 0.2338
30 : USD 0.2307
100 : USD 0.2276

11077
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4466
10 : USD 0.2673
100 : USD 0.1507
1000 : USD 0.1342
3000 : USD 0.1177

2859
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 365
Multiples : 1
365 : USD 0.2791
500 : USD 0.2691
1000 : USD 0.2603
2500 : USD 0.2526

5206
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 256
Multiples : 1
256 : USD 0.1591
500 : USD 0.1494

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Transistor Type
Brand
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the RQ3E080BNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E080BNTB and other electronic components in the MOSFETs category and beyond.

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RQ3E080BN Datasheet Nch 30V 15A Power MOSFET llOutline V 30V DSS R (Max.) 15.2m DS(on) HSMT8 I 15A D P 14W D llInner circuit llFeatures 1) Low on - resistance 2) High Power Package (HSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 3000 Taping code TB Marking E080BN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 15 A c D Continuous drain current T = 25C I 8 A a D *2 I Pulsed drain current 32 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 8.0 A AS *3 E Avalanche energy, single pulse 4.6 mJ AS *1 P 14 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.003 RQ3E080BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 8.9 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 8A - 11.0 15.2 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 8A - 16.0 22.0 GS D R Gate resistance f=1MHz, open drain - 3.2 - G Forward Transfer *5 Y V = 5V, I = 8A 7 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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