RR1VWM4STFTR ROHM

Rectifier Diode RR1VWM4STF Data Sheet AEC-Q101 Qualified lSeries lDimensions (Unit : mm) lLand Size Figure (Unit : mm) Standard Rectifier 1.1 lApplications General rectification 0.8 PMDE lFeatures Cathode 1) Low forward voltage lStructure High current overload capacity 2) ROHM : PMDE dot (year week factory) + day 3) Small mold type (PMDE) Anode lTaping Dimensions (Unit : mm) lConstruction Silicon diffused junction type lAbsolute Maximum Ratings (T = 25C) l Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 400 V RM Reverse voltage V Direct voltage 400 V R On glass epoxy substrate, T =125C I Average current l 1 A o 60Hz half sin wave , Resistive load 60Hz half sin wave, Non-repetitive forward surge current I 15 A FSM Non-repetitive at T=25C j T - 175 Junction temperature C j T - Storage temperature -55 to +175 C stg lElectrical Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit I =1A Forward voltage V 0.9 1.08 1.2 V F F V =400V Reverse current I - - 10 R mA R Thermal resistance R Junction to lead - - 30 C/W th(j-l) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.07 - Rev.A 1/4 0.8 0.5 2.0 Data Sheet RR1VWM4STF lElectrical Characteristic Curves 10 100000 10000 T = 125 C j T = 175 C T = 175 C j j 1 1000 T = 75 C j T = 125 C j 100 0.1 T = 25 C j 10 T = 75 C j 1 T = -40 C j T = 25 C j 0.01 0.1 T = -40 C j 0.001 0.01 0 100 200 300 400 0 200 400 600 800 10001200140016001800 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 10 100 T = 25 C f = 1MHz j T = 25 C a 10 1 1 I FSM 8.3ms 8.3ms 1cyc. 0.1 0.1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.07 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM