TSM60NB190CZ C0G Taiwan Semiconductor

TSM60NB190CI TSM60NB190CZ Taiwan Semiconductor N-Channel Power MOSFET 600V, 18A, 0.19 FEATURES KEY PERFORMANCE PARAMETERS Super-Junction technology PARAMETER VALUE UNIT High performance, small R *Q figure of merit (FOM) DS(ON) g V 600 V DS High ruggedness performance R (max) 0.19 DS(on) 100% UIS tested Q g 31 nC High commutation performance Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS Power Supply AC/DC LED Lighting ITO-220 TO-220 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL ITO-220 TO-220 UNIT Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS T = 25C 18 A C (Note 1) Continuous Drain Current I D T = 100C 10.8 A C (Note 2) Pulsed Drain Current I 54 A DM Total Power Dissipation T = 25C P 33.8 150.6 W C DTOT (Note 3) Single Pulsed Avalanche Energy E 212.9 mJ AS (Note 3) Single Pulsed Avalanche Current I 2.6 A AS Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL ITO-220 TO-220 UNIT Junction to Case Thermal Resistance R 3.7 0.83 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board JA CA design. R shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. JA 1 Version: D1608 TSM60NB190CI TSM60NB190CZ Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 600 -- -- GS D DSS V Gate Threshold Voltage V = V , I = 250A V 2.0 3.0 4.0 V DS GS D GS(TH) Gate Body Leakage V = 30V, V = 0V I -- -- 100 GS DS GSS nA Zero Gate Voltage Drain Current V = 600V, V = 0V I -- -- 1 A DS GS DSS Drain-Source On-State Resistance V = 10V, I = 6A R -- 0.17 0.19 GS D DS(on) (Note 4) (Note 5) Dynamic Total Gate Charge Q -- 31 -- g V = 380V, I = 18A, DS D Gate-Source Charge Q -- 8 -- gs nC V = 10V GS Gate-Drain Charge Q -- 12.6 -- gd Input Capacitance C -- 1273 -- iss V = 100V, V = 0V, DS GS pF Output Capacitance f = 1.0MHz C -- 92 -- oss Gate Resistance F = 1MHz, open drain R -- 3.1 -- g (Note 6) Switching Turn-On Delay Time t -- 36 -- d(on) V = 380V, DD Turn-On Rise Time t -- 21 -- r R = 25, ns GEN Turn-Off Delay Time t -- 95 -- d(off) I = 18A, V = 10V, D GS Turn-Off Fall Time t -- 21 -- f Source-Drain Diode (Note 4) Forward On Voltage -- -- 1.4 V I = 18A, V = 0V V S GS SD Reverse Recovery Time -- 359.4 -- ns t rr V =100V, I = 18A R S Reverse Recovery Charge -- 4.54 -- C dI /dt = 100A/s Q F rr Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. o 3. L = 63mH, I = 2.6A, V = 50V, R = 25, Starting T = 25 C AS DD G J 4. Pulse test: PW 300s, duty cycle 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM60NB190CI C0G ITO-220 50pcs / Tube TSM60NB190CZ C0G TO-220 50pcs / Tube 2 Version: D1608