X-On Electronics has gained recognition as a prominent supplier of BSP296NH6433XTMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP296NH6433XTMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSP296NH6433XTMA1 Infineon

BSP296NH6433XTMA1 electronic component of Infineon
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Part No.BSP296NH6433XTMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET SMALL SIGNAL N-CH
Datasheet: BSP296NH6433XTMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8105 ea
Line Total: USD 0.81 
Availability - 4594
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4594
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8105
10 : USD 0.6018
100 : USD 0.4239
500 : USD 0.3429
1000 : USD 0.3152
2000 : USD 0.3025
4000 : USD 0.2897
8000 : USD 0.278

3880
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 37
Multiples : 1
37 : USD 1.1002
50 : USD 0.9668
100 : USD 0.7232
200 : USD 0.6907
500 : USD 0.5622
1000 : USD 0.533
4000 : USD 0.5314

7760
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 4000
Multiples : 4000
4000 : USD 0.3645

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
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Typical Turn-On Delay Time
Cnhts
Hts Code
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We are delighted to provide the BSP296NH6433XTMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP296NH6433XTMA1 and other electronic components in the MOSFETs category and beyond.

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BSP296N OptiMOS Small-Signal-Transistor Product Summary Features V 100 V DS N-channel R V =10 V 0.6 W DS(on),max GS Enhancement mode V =4.5 V 0.8 GS Logic level (4.5V rated) I 1.2 A D Avalanche rated Qualified according to AEC Q101 PG-SOT223 100% lead-free RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Halogen-Free Packing BSP296N SOT223 H6327: 1000 pcs/ reel BSP296N Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 1.2 A D A T =70C 0.9 A I T =25C Pulsed drain current 4.6 D,pulse A Avalanche energy, single pulse E I =1.2A, R =25W 15.0 mJ AS D GS I =1.2A, V =80V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 20 V GS Power dissipation P T =25C 1.8 W tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.0 page 1 2013-04-04BSP296N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 25 K/W thJS junction - soldering point Thermal resistance R minimal footprint - - 110 thJA 2 1) junction - ambient - - 70 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =250A 100 - - V (BR)DSS GS D V V =VgsV, I =100A Gate threshold voltage 0.8 1.4 1.8 GS(th) DS D V =100V, V =0V, DS GS I Drain-source leakage current - - 0.1 mA DSS T =25C j V =100V, V =0V, DS GS - - 10 T =150C j I V =20V, V =0V Gate-source leakage current - - 10 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =0.95A - 371 800 mW DS(on) GS D V =10V, I =1.2A - 329 600 GS D V >2 I R , DS D DS(on)max g Transconductance 2.66 - S fs I =0.9A D 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for drain connection. PCB is vertical in still air. Rev 2.0 page 2 2013-04-04

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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