DMN63D1LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Dual N-Channel MOSFET
I max Low On-Resistance
D
V R max
(BR)DSS DS(ON)
T = +25C Low Gate Threshold Voltage
A
2 @ V = 10V Low Input Capacitance
GS
60V 250mA
3 @ V = 5V Fast Switching Speed
GS
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Description
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
This MOSFET is designed to minimize the on-state resistance
Halogen and Antimony Free. Green Device (Note 3)
(R ) and yet maintain superior switching performance, making it
DS(ON)
Qualified to AEC-Q101 Standards for High Reliability
ideal for high efficiency power management applications.
Mechanical Data
Case: SOT363
Applications
Case Material: Molded Plastic. Green Molding Compound.
Motor Control
UL Flammability Classification Rating 94V-0
Power Management Functions
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
D1 D2
SOT363
D G S
2 1 1
G1 G2
ESD Protected Gate
Gate Protection Gate Protection
S2
S1 Diode
Diode
S G D
2 2 1
Q1 N-Channel Q2 N-Channel
Top View
Top View
Pin out
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN63D1LDW-7 SOT363 3000/Tape & Reel
DMN63D1LDW-13 SOT363 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN63D1LDW
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage V 20 V
GSS
Steady T = +25C 250
A
mA
Continuous Drain Current (Note 6) V = 10V I
GS D
State 200
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 6) 0.5 A
I
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 6) I 1.2 A
DM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P 310 mW
D
Thermal Resistance, Junction to Ambient (Note 5) Steady State 414 C/W
R
JA
Total Power Dissipation (Note 6) P 390 mW
D
Thermal Resistance, Junction to Ambient (Note 6) Steady State 324 C/W
R
JA
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 10A
DSS GS D
Zero Gate Voltage Drain Current I 1.0 A V = 60V, V = 0V
DSS DS GS
Gate-Source Leakage 10 A
IGSS VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 1.0 1.6 2.5 V
V V = 10V, I = 1mA
GS(TH) DS D
2.0 V = 10V, I = 0.5A
GS D
Static Drain-Source On-Resistance R
DS(ON)
3.0
V = 5V, I = 0.05A
GS D
Forward Transfer Admittance 80 mS
|Y | V =10V, I = 0.2A
fs DS D
Diode Forward Voltage 0.75 1.1 V
V V = 0V, I = 115mA
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 30 pF
iss
VDS = 25V, VGS = 0V
Output Capacitance C 4.2 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C 2.9 pF
rss
Gate Resistance R 133 f = 1MHz , V = 0V, V = 0V
g GS DS
Total Gate Charge Q 304 pC
g
V = 4.5V, V = 10V,
GS DS
Gate-Source Charge 203 pC
Qgs
I = 250mA
D
Gate-Drain Charge 84 pC
Q
gd
Turn-On Delay Time 3.9 ns
t
D(ON)
Turn-On Rise Time 3.4 ns
t V = 30V, V = 10V,
R DD GS
Turn-Off Delay Time 15.7 ns
t R = 25, I = 200mA
D(OFF) G D
Turn-Off Fall Time t 9.9 ns
F
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMN63D1LDW July 2015
Diodes Incorporated
www.diodes.com
Document number: DS38033 Rev. 1 - 2
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