StrongIRFET IRF7780MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications V 75V DSS BLDC Motor drive applications R typ. 4.5m Battery powered circuits DS(on) Half-bridge and full-bridge topologies max 5.7m Synchronous rectifier applications Resonant mode power supplies I 89A D OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters S SS S DD Benefits SS G Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA DirectFET ISOMETRIC Enhanced body diode dv/dt and di/dt Capability ME Lead-Free, RoHS Compliant Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRF7780MPbF DirectFET ME Tape and Reel 4800 IRF7780MTRPbF 15 100 I = 53A D 12 80 9 60 T = 125C J 6 40 3 T = 25C 20 J 0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 T , Case Temperature (C) V Gate -to -Source Voltage (V) C GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback June 4, 2015 R , Drain-to -Source On Resistance (m) DS(on) I , Drain Current (A) D IRF7780MTRPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 89 D C GS I T = 100C Continuous Drain Current, V 10V 57 A D C GS I Pulsed Drain Current 356 DM P T = 25C Maximum Power Dissipation 96 W D C Linear Derating Factor 0.77 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and -55 to + 150 J C Storage Temperature Range T STG Avalanche Characteristics E Single Pulse Avalanche Energy 82 AS (Thermally limited) mJ E Single Pulse Avalanche Energy 133 AS (Thermally limited) I Avalanche Current A AR See Fig.15,16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient 45 R JA Junction-to-Ambient 12.5 R JA Junction-to-Ambient 20 C/W R JA R Junction-to-Case 1.3 JC R Junction-to-PCB Mounted 0.75 J-PCB Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 53 mV/C Reference to 25C, I = 1.0mA D (BR)DSS J R Static Drain-to-Source On-Resistance 4.5 5.7 V = 10V, I = 53A DS(on) GS D m 5.2 V = 6.0V, I = 27A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 150A GS(th) DS GS D 1.0 V = 75V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.8 G Notes: Mounted on minimum footprint full size board with metalized TC measured with thermocouple mounted to top (Drain) of part. back and with small clip heatsink. Used double sided cooling , mounting pad with large heatsink. Mounted to a PCB with small clip Mounted on minimum footprint full size Surface mounted on 1 in. square Cu heatsink (still air) board with metalized back and with board (still air). small clip heatsink (still air) 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback June 4, 2015