X-On Electronics has gained recognition as a prominent supplier of IRF7780MTRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF7780MTRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF7780MTRPBF Infineon

IRF7780MTRPBF electronic component of Infineon
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See Product Specifications
Part No.IRF7780MTRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET 75V, 89A, DirectFET 5.7mOhm, 124nC Og
Datasheet: IRF7780MTRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.2085 ea
Line Total: USD 3.21 
Availability - 1325
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1325
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 3.2085
10 : USD 2.691
25 : USD 2.5415
100 : USD 2.1735
250 : USD 2.0585
500 : USD 1.932
1000 : USD 1.748
2500 : USD 1.6905
4800 : USD 1.61

   
Manufacturer
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the IRF7780MTRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7780MTRPBF and other electronic components in the MOSFETs category and beyond.

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StrongIRFET IRF7780MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications V 75V DSS BLDC Motor drive applications R typ. 4.5m Battery powered circuits DS(on) Half-bridge and full-bridge topologies max 5.7m Synchronous rectifier applications Resonant mode power supplies I 89A D OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters S SS S DD Benefits SS G Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA DirectFET ISOMETRIC Enhanced body diode dv/dt and di/dt Capability ME Lead-Free, RoHS Compliant Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRF7780MPbF DirectFET ME Tape and Reel 4800 IRF7780MTRPbF 15 100 I = 53A D 12 80 9 60 T = 125C J 6 40 3 T = 25C 20 J 0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 T , Case Temperature (C) V Gate -to -Source Voltage (V) C GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback June 4, 2015 R , Drain-to -Source On Resistance (m) DS(on) I , Drain Current (A) D IRF7780MTRPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 89 D C GS I T = 100C Continuous Drain Current, V 10V 57 A D C GS I Pulsed Drain Current 356 DM P T = 25C Maximum Power Dissipation 96 W D C Linear Derating Factor 0.77 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and -55 to + 150 J C Storage Temperature Range T STG Avalanche Characteristics E Single Pulse Avalanche Energy 82 AS (Thermally limited) mJ E Single Pulse Avalanche Energy 133 AS (Thermally limited) I Avalanche Current A AR See Fig.15,16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient 45 R JA Junction-to-Ambient 12.5 R JA Junction-to-Ambient 20 C/W R JA R Junction-to-Case 1.3 JC R Junction-to-PCB Mounted 0.75 J-PCB Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 53 mV/C Reference to 25C, I = 1.0mA D (BR)DSS J R Static Drain-to-Source On-Resistance 4.5 5.7 V = 10V, I = 53A DS(on) GS D m 5.2 V = 6.0V, I = 27A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 150A GS(th) DS GS D 1.0 V = 75V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.8 G Notes: Mounted on minimum footprint full size board with metalized TC measured with thermocouple mounted to top (Drain) of part. back and with small clip heatsink. Used double sided cooling , mounting pad with large heatsink. Mounted to a PCB with small clip Mounted on minimum footprint full size Surface mounted on 1 in. square Cu heatsink (still air) board with metalized back and with board (still air). small clip heatsink (still air) 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback June 4, 2015

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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