CXDM3069N
SURFACE MOUNT
www.centralsemi.com
N-CHANNEL
DESCRIPTION:
ENHANCEMENT-MODE
The CENTRAL SEMICONDUCTOR CXDM3069N is
SILICON MOSFET
a high current N-channel enhancement-mode silicon
MOSFET, designed for high speed pulsed amplifier
and driver applications. This MOSFET offers high
current, low r , low threshold voltage, and low
DS(ON)
leakage current.
MARKING: FULL PART NUMBER
SOT-89 CASE
FEATURES:
APPLICATIONS:
Low r (50m MAX @ V =2.5V)
Load/Power switches
DS(ON) GS
Power supply converter circuits High current (I =6.9A)
D
Battery powered portable equipment
Logic level compatibility
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Drain-Source Voltage V 30 V
DS
Gate-Source Voltage V 12 V
GS
Continuous Drain Current (Steady State) I 6.9 A
D
Maximum Pulsed Drain Current, tp=10s I 40 A
DM
Power Dissipation P 1.2 W
D
Operating and Storage Junction Temperature T , T -55 to +150 C
J stg
Thermal Resistance 104 C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I , I V =12V, V=0 100 nA
GSSF GSSR GS DS
I V =24V, V=0 1.0 A
DSS DS GS
BV V =0, I=250A 30 V
DSS GS D
V V =V , I=250A 0.7 0.9 1.4 V
GS(th) GS DS D
r V =10V, I=7.0A 25 30 m
DS(ON) GS D
r V =4.5V, I=6.0A 28 35 m
DS(ON) GS D
r V =2.5V, I=4.0A 38 50 m
DS(ON) GS D
Q V =15V, V =10V, I=5.4A 11 nC
g(tot) DS GS D
Q V =15V, V =10V, I=5.4A 1.0 nC
gs DS GS D
Q V =15V, V =10V, I=5.4A 1.2 nC
gd DS GS D
C V =15V, V =0, f=1.0MHz 47 pF
rss DS GS
C V =15V, V =0, f=1.0MHz 580 pF
iss DS GS
C V =15V, V =0, f=1.0MHz 42 pF
oss DS GS
t V =15V, I =1.0A, R=15 20 ns
on DD D G
t V =15V, I =1.0A, R=15 28 ns
off DD D G
R1 (10-August 2012)CXDM3069N
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-89 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Gate
2) Drain
3) Source
MARKING: FULL PART NUMBER
R1 (10-August 2012)
www.centralsemi.com