X-On Electronics has gained recognition as a prominent supplier of SH8KA2GZETB MOSFETs across the USA, India, Europe, Australia, and various other global locations. SH8KA2GZETB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SH8KA2GZETB ROHM

SH8KA2GZETB electronic component of ROHM
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Part No.SH8KA2GZETB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 30V Nch+Nch Si MOSFET
Datasheet: SH8KA2GZETB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.276 ea
Line Total: USD 1.28 
Availability - 2371
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2371
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.276
10 : USD 1.0153
100 : USD 0.7425
500 : USD 0.6303
1000 : USD 0.5929
2500 : USD 0.5467

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SH8KA2GZETB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SH8KA2GZETB and other electronic components in the MOSFETs category and beyond.

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SH8KA2 Datasheet 30V Nch+Nch Middle Power MOSFET llOutline V 30V DSS R (Max.) 28m DS(on) SOP8 I 8.0A D P 2.8W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package (SOP8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Motor Drive Basic ordering unit (pcs) 2500 Taping code TB Marking SH8KA2 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 I Continuous drain current 8.0 A D *2 I Pulsed drain current 16 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 6.0 A AS *3 E Avalanche energy, single pulse 2.6 mJ AS *1 P 2.8 D *4 P Power dissipation (total) 2.0 W D *5 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20160203 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. SH8KA2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *5 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 21 - mV/ temperature coefficient T j referenced to 25 Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 100 nA GSS DS GS leakage current Gate threshold V V = V , I = 1mA 1.0 - 2.5 V GS(th) DS GS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 8A - 23 28 GS D Static drain - source *6 R m DS(on) on - state resistance V = 4.5V, I = 6A - 34 43 GS D Gate resistance R f = 1MHz, open drain - 2.5 - G Forward Transfer *6 Y V = 5V, I = 6A 4.2 - - S fs DS D Admittance *1 Pw 1s, Mounted on a ceramic board (30300.8mm), Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a Cu board (25250.8mm) *6 Pulsed www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/11 20160203 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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