Green
DMTH6005LK3
60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Rated to +175C Ideal for High Ambient Temperature
D
BV R max
DSS DS(ON)
T = +25C
C
Environments
100% Unclamped Inductive Switching ensures more reliable
60V 90A
5.6m @ VGS = 10V
and robust end application
Low R minimizes power losses
DS(ON)
Low Q minimizes switching losses
g
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description and Applications
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state resistance
(R ) and yet maintain superior switching performance, making it
DS(ON)
Mechanical Data
ideal for high efficiency power management applications.
Case: TO252
Case Material: Molded Plastic, Green Molding Compound.
Engine Management Systems
UL Flammability Classification Rating 94V-0
Body Control Electronics
Moisture Sensitivity: Level 1 per J-STD-020
DCDC Converters
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (Approximate)
D D
TO252
G
D
G S
S
Top View
Top View
Internal Schematic
Pin Out
Ordering Information (Note 4)
Part Number Case Packaging
DMTH6005LK3-13 TO252 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH6005LK3
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C
C
90
Continuous Drain Current (Note 6) (Note 9) A
I
D
T = +100C 70
C
Maximum Body Diode Forward Current (Note 6) 90 A
T = +25C I
C S
Pulsed Drain Current (10s pulse, duty cycle = 1%) I 150 A
DM
Avalanche Current, L=1mH I 14.8 A
AS
Avalanche Energy, L=1mH E 98 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) 2.1 W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 5) R 38 C/W
JA
Total Power Dissipation (Note 6) 100 W
T = +25C P
C D
Thermal Resistance, Junction to Case (Note 6) 1.5 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7 )
Drain-Source Breakdown Voltage 60 V
BV V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 1 3 V
V V = V , I = 250A
GS(TH) DS GS D
4.5 5.6 V = 10V, I = 50A
GS D
Static Drain-Source On-Resistance R 5.6 7.2 m V = 6V, I = 20A
DS(ON) GS D
7.9 10 V = 4.5V, I = 12.5A
GS D
Diode Forward Voltage V 1.2 V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 2962
iss
V = 30V, V = 0V,
DS GS
965.2
Output Capacitance pF
C
oss
f = 1MHz
Reverse Transfer Capacitance 59.8
C
rss
Gate Resistance 0.66
R V = 0V, V = 0V, f = 1MHz
G DS GS
47.1
Total Gate Charge (V = 10V) Q
GS g
23.1
Total Gate Charge (V = 4.5V) Q
GS g
nC
V = 30V, I = 50A
DD D
10.2
Gate-Source Charge Q
gs
Gate-Drain Charge Q 12.5
gd
8.3
Turn-On Delay Time t
D(ON)
Turn-On Rise Time t 9.4
R V = 30V, V = 10V,
DD GS
ns
22
Turn-Off Delay Time I = 30A, R = 3.3
tD(OFF) D G
Turn-Off Fall Time 8.9
t
F
Body Diode Reverse Recovery Time 40.4 ns
t
RR
I = 30A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge 49.7 nC
Q
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
9. Package limited.
2 of 7
DMTH6005LK3 November 2015
Diodes Incorporated
www.diodes.com
Document number: DS38211 Rev. 2 - 2
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